Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsDiodesSchottky Diode

1. Product profile

1.1 General description

Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an

integrated guard ring for stress protection. PMEG3020EPA is encapsulated in an ultra thin

SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium

power capability.

1.2 Features

 Average forward current: I

F(AV)

≤ 2A

 Reverse voltage: V

≤ 30 V

 Low forward voltage

 Exposed heat sink (cathode pad) for excellent thermal and electrical conductivity

 Leadless small SMD plastic package with medium power capability

 AEC-Q101 qualified

1.3 Applications

 Low voltage rectification

 High efficiency DC-to-DC conversion

 Switch Mode Power Supply (SMPS)

 Reverse polarity protection

 Low power consumption applications

 Battery chargers for mobile equipment

1.4 Quick reference data

[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al

, standard footprint.

PMEG3020EPA

2 A low V

MEGA Schottky barrier rectifier

Rev. 01 — 15 December 2009 Product data sheet

Table 1. Quick reference data

=25

C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

F(AV)

average forward current square wave;

δ = 0.5;

f = 20 kHz

amb

≤ 65 °C

[1]

--2A

≤ 140 °C --2A

reverse voltage - - 30 V

forward voltage I

= 2 A - 410 470 mV

reverse current V

= 30 V - 435 2500 μA

Summary of content (13 pages)

PAGE 1
PMEG3020EPA 2 A low VF MEGA Schottky barrier rectifier Rev. 01 — 15 December 2009 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection. PMEG3020EPA is encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. 1.
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PMEG3020EPA NXP Semiconductors 2 A low VF MEGA Schottky barrier rectifier 2. Pinning information Table 2. Pinning Pin Description 1 anode 2 anode 3 cathode Simplified outline Graphic symbol 3 3 1, 2 006aab624 1 2 Transparent top view 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMEG3020EPA HUSON3 plastic thermal enhanced ultra thin small outline package; SOT1061 no leads; three terminals; body 2 × 2 × 0.65 mm 4.
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PMEG3020EPA NXP Semiconductors 2 A low VF MEGA Schottky barrier rectifier Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Tj Conditions Min Max Unit junction temperature - 150 °C Tamb ambient temperature −55 +150 °C Tstg storage temperature −65 +150 °C [1] Device mounted on a ceramic PCB, Al2O3, standard footprint. [2] Both anode pins connected. [3] Tj = 25 °C prior to surge.
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PMEG3020EPA NXP Semiconductors 2 A low VF MEGA Schottky barrier rectifier 006aab637 103 duty cycle = Zth(j-a) (K/W) 1 0.75 0.5 102 0.25 0.33 0.2 0.1 0.05 0.02 10 0.01 0 1 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aab638 103 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.5 0.33 0.25 0.1 0.2 0.05 10 0 1 10−3 0.02 0.
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PMEG3020EPA NXP Semiconductors 2 A low VF MEGA Schottky barrier rectifier 006aab639 102 duty cycle = 1 0.75 Zth(j-a) (K/W) 0.5 0.33 0.25 0.1 10 0.2 0.05 0 0.02 0.01 1 10−3 10−2 10−1 1 102 10 103 tp (s) Ceramic PCB, Al2O3, standard footprint Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 7. Characteristics Table 7. Characteristics Tj = 25 °C unless otherwise specified.
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PMEG3020EPA NXP Semiconductors 2 A low VF MEGA Schottky barrier rectifier 006aab640 10 IF (A) (1) 1 006aab641 1 IR (A) 10−1 (1) (2) (2) 10−2 (3) 10−1 (4) (5) 10−3 (3) 10−4 10−2 10−5 10−3 10−6 10−4 (4) 10−7 0 0.2 0.4 0.6 0 10 VF (V) 20 30 VR (V) (1) Tj = 150 °C (1) Tj = 125 °C (2) Tj = 125 °C (2) Tj = 85 °C (3) Tj = 85 °C (3) Tj = 25 °C (4) Tj = 25 °C (4) Tj = −40 °C (5) Tj = −40 °C Fig 4. Forward current as a function of forward voltage; typical values Fig 5.
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PMEG3020EPA NXP Semiconductors 2 A low VF MEGA Schottky barrier rectifier 006aab643 1.5 PF(AV) (W) 006aab644 4.5 (4) PR(AV) (W) (3) 1.2 (2) 3.0 (1) 0.9 (1) (2) (3) 0.6 1.5 (4) 0.3 0.0 0.0 0 1.0 2.0 3.0 0 10 20 IF(AV) (A) Tj = 150 °C Tj = 125 °C (1) δ = 0.1 (1) δ = 1 (2) δ = 0.2 (2) δ = 0.9 (3) δ = 0.5 (3) δ = 0.8 (4) δ = 1 Fig 7. 30 VR (V) (4) δ = 0.5 Average forward power dissipation as a function of average forward current; typical values 006aab645 3.0 Fig 8.
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PMEG3020EPA NXP Semiconductors 2 A low VF MEGA Schottky barrier rectifier 006aab647 3.0 (1) IF(AV) (A) 006aab648 3.0 (1) IF(AV) (A) (2) (2) 2.0 2.0 (3) (3) (4) 1.0 (4) 1.0 0.0 0.0 0 25 50 75 100 125 150 175 Tamb (°C) 0 25 50 75 100 125 150 175 Tsp (°C) Tj = 150 °C Ceramic PCB, Al2O3, standard footprint Tj = 150 °C (1) δ = 1; DC (1) δ = 1; DC (2) δ = 0.5; f = 20 kHz (2) δ = 0.5; f = 20 kHz (3) δ = 0.2; f = 20 kHz (3) δ = 0.2; f = 20 kHz (4) δ = 0.
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PMEG3020EPA NXP Semiconductors 2 A low VF MEGA Schottky barrier rectifier 8. Test information P duty cycle δ = t2 t1 t2 t1 t 006aaa812 Fig 13. Duty cycle definition The current ratings for the typical waveforms as shown in Figure 9, 10, 11 and 12 are calculated according to the equations: I F ( AV ) = I M × δ with IM defined as peak current, I RMS = I F ( AV ) at DC, and I RMS = I M × δ with IRMS defined as RMS current. 8.
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PMEG3020EPA NXP Semiconductors 2 A low VF MEGA Schottky barrier rectifier 10. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package Description Packing quantity PMEG3020EPA SOT1061 4 mm pitch, 8 mm tape and reel -115 3000 [1] For further information and the availability of packing methods, see Section 14. 11. Soldering 2.1 1.3 0.5 (2×) 0.4 (2×) 0.5 (2×) 0.6 (2×) 1.05 2.3 0.6 0.55 0.25 1.1 0.25 1.2 0.
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PMEG3020EPA NXP Semiconductors 2 A low VF MEGA Schottky barrier rectifier 12. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes PMEG3020EPA_1 20091215 Product data sheet - - PMEG3020EPA_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev.
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PMEG3020EPA NXP Semiconductors 2 A low VF MEGA Schottky barrier rectifier 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
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PMEG3020EPA NXP Semiconductors 2 A low VF MEGA Schottky barrier rectifier 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . .