Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsDiodesSchottky Diode

1. Product profile

1.1 General description

Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier in

common cathode configuration with an integrated guard ring for stress protection,

encapsulated in a SOT1061 leadless small Surface-Mounted Device (SMD) plastic

package with medium power capability.

1.2 Features and benefits

 Average forward current: I

F(AV)

≤ 1A

 Reverse voltage: V

≤ 60 V

 Low forward voltage

 Exposed heat sink (cathode pad) for excellent thermal and electrical conductivity

 Leadless small SMD plastic package with medium power capability

 AEC-Q101 qualified

1.3 Applications

 Low voltage rectification

 High efficiency DC-to-DC conversion

 Switch Mode Power Supply (SMPS)

 Reverse polarity protection

 Low power consumption applications

 Battery chargers for mobile equipment

1.4 Quick reference data

[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al

, standard footprint.

PMEG6010CPA

1 A low V

dual MEGA Schottky barrier rectifier

Rev. 1 — 25 August 2010 Product data sheet

Table 1. Quick reference data

=25

C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

Per diode

F(AV)

average forward

current

square wave;

δ = 0.5; f = 20 kHz

amb

≤ 110 °C

[1]

--1A

≤ 140 °C--1A

reverse voltage - - 60 V

forward voltage I

= 1 A - 490 540 mV

reverse current V

=60V - 33 100 μA

Summary of content (15 pages)

PAGE 1
PMEG6010CPA 1 A low VF dual MEGA Schottky barrier rectifier Rev. 1 — 25 August 2010 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier in common cathode configuration with an integrated guard ring for stress protection, encapsulated in a SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. 1.
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PMEG6010CPA NXP Semiconductors 1 A low VF dual MEGA Schottky barrier rectifier 2. Pinning information Table 2. Pinning Pin Description Simplified outline 1 anode diode 1 2 anode diode 2 3 common cathode Graphic symbol 3 3 1 2 1 Transparent top view 2 006aaa438 3. Ordering information Table 3.
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PMEG6010CPA NXP Semiconductors 1 A low VF dual MEGA Schottky barrier rectifier Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134).
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PMEG6010CPA NXP Semiconductors 1 A low VF dual MEGA Schottky barrier rectifier 006aac439 103 Zth(j-a) (K/W) duty cycle = 1 0.75 0.5 102 0.33 0.25 0.2 0.1 0.05 10 0.02 0.01 0 1 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aac440 103 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.5 0.25 0.1 10 0 1 10−3 0.33 0.2 0.05 0.02 0.
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PMEG6010CPA NXP Semiconductors 1 A low VF dual MEGA Schottky barrier rectifier 006aac441 102 duty cycle = 1 0.75 Zth(j-a) (K/W) 0.5 0.33 0.25 0.2 0.1 0.05 0 0.02 0.01 10 1 10−3 10−2 10−1 1 102 10 103 tp (s) Ceramic PCB, Al2O3, standard footprint Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 7. Characteristics Table 7. Characteristics Tj = 25 °C unless otherwise specified.
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PMEG6010CPA NXP Semiconductors 1 A low VF dual MEGA Schottky barrier rectifier 006aac442 10 IF (A) 1 006aac443 10−2 IR (A) 10−3 (1) (2) (1) 10−4 (2) 10−1 10−5 (3) (3) 10−2 (4) 10−6 (5) 10−7 10−3 10−8 (4) 10−4 0.0 10−9 0.2 0.4 0.6 0.8 1.0 0 20 VF (V) 40 60 VR (V) (1) Tj = 150 °C (1) Tj = 125 °C (2) Tj = 125 °C (2) Tj = 85 °C (3) Tj = 85 °C (3) Tj = 25 °C (4) Tj = 25 °C (4) Tj = −40 °C (5) Tj = −40 °C Fig 4.
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PMEG6010CPA NXP Semiconductors 1 A low VF dual MEGA Schottky barrier rectifier 006aac445 0.8 006aac446 0.75 (4) PF(AV) (W) PR(AV) (W) (3) 0.6 0.50 (1) (2) (2) 0.4 (1) (3) 0.25 0.2 (4) 0.0 0.0 0.00 0.5 1.0 1.5 0 20 40 IF(AV) (A) Tj = 150 °C Tj = 125 °C (1) δ = 0.1 (1) δ = 1 (2) δ = 0.2 (2) δ = 0.9 (3) δ = 0.5 (3) δ = 0.8 (4) δ = 1 (4) δ = 0.5 Fig 7. Average forward power dissipation as a function of average forward current; typical values 006aac447 1.5 Fig 8.
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PMEG6010CPA NXP Semiconductors 1 A low VF dual MEGA Schottky barrier rectifier 006aac449 1.5 006aac450 1.5 (1) (1) IF(AV) (A) IF(AV) (A) (2) (2) 1.0 1.0 (3) (3) (4) 0.5 0.5 (4) 0.0 0.0 0 25 50 75 100 125 150 175 Tamb (°C) 0 25 50 75 100 125 150 175 Tsp (°C) Tj = 150 °C Ceramic PCB, Al2O3, standard footprint Tj = 150 °C (1) δ = 1; DC (1) δ = 1; DC (2) δ = 0.5; f = 20 kHz (2) δ = 0.5; f = 20 kHz (3) δ = 0.2; f = 20 kHz (3) δ = 0.2; f = 20 kHz (4) δ = 0.
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PMEG6010CPA NXP Semiconductors 1 A low VF dual MEGA Schottky barrier rectifier 8. Test information tr tp t D.U.T. 10 % + IF IF RS = 50 Ω SAMPLING OSCILLOSCOPE V = VR + IF × RS trr t Ri = 50 Ω (1) 90 % VR mga881 input signal output signal (1) IR = 1 mA Fig 13. Reverse recovery time test circuit and waveforms P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig 14.
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PMEG6010CPA NXP Semiconductors 1 A low VF dual MEGA Schottky barrier rectifier 9. Package outline 1.3 0.65 max 0.35 0.25 1 1.05 0.95 2 0.45 0.35 1.1 0.9 0.3 0.2 2.1 1.9 3 1.6 1.4 Dimensions in mm 2.1 1.9 09-11-12 Fig 15. Package outline SOT1061 10. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.
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PMEG6010CPA NXP Semiconductors 1 A low VF dual MEGA Schottky barrier rectifier 11. Soldering 2.1 1.3 0.5 (2×) 0.4 (2×) 0.5 (2×) 0.6 (2×) 1.05 2.3 0.6 0.55 0.25 1.1 0.25 1.2 0.25 0.4 0.5 1.6 1.7 Dimensions in mm solder paste = solder lands solder resist occupied area sot1061_fr Reflow soldering is the only recommended soldering method. Fig 16. Reflow soldering footprint SOT1061 PMEG6010CPA Product data sheet All information provided in this document is subject to legal disclaimers. Rev.
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PMEG6010CPA NXP Semiconductors 1 A low VF dual MEGA Schottky barrier rectifier 12. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes PMEG6010CPA v.1 20100825 Product data sheet - - PMEG6010CPA Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 25 August 2010 © NXP B.V. 2010. All rights reserved.
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PMEG6010CPA NXP Semiconductors 1 A low VF dual MEGA Schottky barrier rectifier 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
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PMEG6010CPA NXP Semiconductors 1 A low VF dual MEGA Schottky barrier rectifier Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For more information, please visit: http://www.
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PMEG6010CPA NXP Semiconductors 1 A low VF dual MEGA Schottky barrier rectifier 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . .