Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsFETsPMF370XN,115, MOSFET

1. Product profile

1.1 General description

Extremely low level N-channel enhancement mode Field-Effect Transistor (FET) in a

plastic package using TrenchMOS technology. This product is designed and qualified for

use in computing, communications, consumer and industrial applications only.

1.2 Features and benefits

1.3 Applications

1.4 Quick reference data

PMF370XN

N-channel TrenchMOS extremely low level FET

Rev. 03 — 20 June 2008 Product data sheet

 Low conduction losses due to low

on-state resistance

 Low threshold voltage

 Saves PCB space due to small footprint

(40 % smaller than SOT23)

 Suitable for low gate drive sources

 Surface-mounted package

 Driver circuits  Switching in portable appliances

Table 1. Quick reference

Symbol Parameter Conditions Min Typ Max Unit

drain-source voltage T

≥ 25 °C; T

≤ 150 °C --30V

drain current T

=25°C; V

=4.5V;

see Figure 1 and 3

--0.87A

tot

total power dissipation T

=25°C; see Figure 2 --0.56W

Static characteristics

DSon

drain-source on-state

resistance

=4.5V; I

=0.2A;

=25°C; see Figure 9 and

- 370 440 mΩ

Summary of content (12 pages)

PAGE 1
PMF370XN N-channel TrenchMOS extremely low level FET Rev. 03 — 20 June 2008 Product data sheet 1. Product profile 1.1 General description Extremely low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.
PAGE 2
PMF370XN NXP Semiconductors N-channel TrenchMOS extremely low level FET 2. Pinning information Table 2. Pinning Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline Graphic symbol D 3 G 1 2 mbb076 SOT323 (SC-70) S 3. Ordering information Table 3. Ordering information Type number PMF370XN Package Name Description Version SC-70 plastic surface-mounted package; 3 leads SOT323 4. Limiting values Table 4.
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PMF370XN NXP Semiconductors N-channel TrenchMOS extremely low level FET 03aa25 120 03aa17 120 Ider (%) Pder (%) 80 80 40 40 0 0 0 50 100 150 200 0 50 100 150 Tsp (°C) Ider = ID ID(25°C ) × 100 % P der = Fig 1. Normalized continuous drain current as a function of solder point temperature P tot P tot (25°C ) × 100 % Fig 2.
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PMF370XN NXP Semiconductors N-channel TrenchMOS extremely low level FET 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Rth(j-sp) thermal resistance see Figure 4 from junction to solder point Min Typ Max Unit - - 220 K/W 03an27 103 Zth(j-sp) (K/W) 102 δ = 0.5 0.2 0.1 0.05 0.02 10 δ= P single pulse tp T t tp T 1 10-4 10-3 10-2 10-1 1 tp (s) 10 Fig 4.
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PMF370XN NXP Semiconductors N-channel TrenchMOS extremely low level FET Table 6. Characteristics …continued Symbol Parameter Conditions Min Typ Max Unit RDSon drain-source on-state resistance VGS = 2.5 V; ID = 0.1 A; Tj = 25 °C; see Figure 9 and 10 - 550 650 mΩ VGS = 4.5 V; ID = 0.2 A; Tj = 150 °C; see Figure 10 - 629 748 mΩ VGS = 4.5 V; ID = 0.2 A; Tj = 25 °C; see Figure 9 and 10 - 370 440 mΩ ID = 1 A; VDS = 15 V; VGS = 4.5 V; Tj = 25 °C; see Figure 11 and 12 - 0.
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PMF370XN NXP Semiconductors N-channel TrenchMOS extremely low level FET 03al82 2 VGS (th) (V) 03an65 10−3 ID (A) 1.5 max 1 10−4 typ min 10−5 typ max min 0.5 10−6 0 −60 0 60 120 180 0 0.8 1.2 1.6 VGS (V) ID = 0.25 A;VDS = VGS T j = 25°C;VDS = 5V Fig 7. Gate-source threshold voltage as a function of junction temperature Fig 8. Subthreshold drain current as a function of gate-source voltage 03ao01 1 VGS (V) = 2.5 RDSon (Ω) 0.4 Tj (°C) 03al00 1.8 3 a 0.8 3.5 1.2 0.6 4.
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PMF370XN NXP Semiconductors N-channel TrenchMOS extremely low level FET 03ao05 5 VGS (V) ID = 1 A Tj = 25 °C 4 VDS ID VDS = 15 V 3 VGS(pl) 2 VGS(th) VGS 1 QGS1 QGS2 QGS QGD QG(tot) 0 0 0.2 0.4 0.6 0.8 QG (nC) 003aaa508 ID = 1 A;VDS = 15V Fig 11. Gate charge waveform definitions Fig 12. Gate-source voltage as a function of gate charge; typical values 03ao04 102 03ao03 1 VGS = 0 V IS (A) 0.8 Ciss C (pF) 0.6 10 Coss 0.4 Crss 0.2 Tj = 25 °C 150 °C 1 10−1 1 102 10 0 0 0.2 0.
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PMF370XN NXP Semiconductors N-channel TrenchMOS extremely low level FET 7. Package outline Plastic surface-mounted package; 3 leads SOT323 D E B A X HE y v M A 3 Q A A1 c 1 2 e1 bp Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w mm 1.1 0.8 0.1 0.4 0.3 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.23 0.13 0.2 0.
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PMF370XN NXP Semiconductors N-channel TrenchMOS extremely low level FET 8. Soldering 2.65 1.85 1.325 solder lands solder resist 2 2.35 0.6 (3×) 3 1.3 1 0.5 (3×) solder paste occupied area Dimensions in mm 0.55 (3×) sot323_fr Fig 16. SOT323 (SC-70) PMF370XN_3 Product data sheet © NXP B.V. 2008. All rights reserved. Rev.
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PMF370XN NXP Semiconductors N-channel TrenchMOS extremely low level FET 9. Revision history Table 7. Revision history Document ID Release date Data sheet status Change notice Supersedes PMF370XN_3 20080620 Product data sheet - PMF370XN_2 Modifications: • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors.
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PMF370XN NXP Semiconductors N-channel TrenchMOS extremely low level FET 10. Legal information 10.1 Data sheet status Document status[1][2] Product status[3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
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PMF370XN NXP Semiconductors N-channel TrenchMOS extremely low level FET 12. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 10.1 10.2 10.3 10.4 11 12 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . .