Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsFETsPMN34UP,115, MOSFET

1. Product profile

1.1 General description

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74)

Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

1.2 Features and benefits

 1.8 V R

DSon

rated

 Very fast switching

 Trench MOSFET technology

1.3 Applications

 Relay driver

 High-speed line driver

 High-side loadswitch

 Switching circuits

1.4 Quick reference data

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm

2. Pinning information

PMN34UP

20 V, 5 A P-channel Trench MOSFET

Rev. 1 — 9 May 2011 Product data sheet

SOT457

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

drain-source voltage T

=25°C ---20V

gate-source voltage -8 - 8 V

drain current V

=-4.5V; T

amb

=25°C

[1]

---5A

Static characteristics

DSon

drain-source on-state

resistance

=-4.5V; I

=-2.4A; T

= 25 °C - 34 40 mΩ

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1 D drain

SOT457 (TSOP6)

2 D drain

3 G gate

4Ssource

5 D drain

6 D drain

132

017aaa094

Summary of content (15 pages)

PAGE 1
SO T4 57 PMN34UP 20 V, 5 A P-channel Trench MOSFET Rev. 1 — 9 May 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  1.8 V RDSon rated  Trench MOSFET technology  Very fast switching 1.3 Applications  Relay driver  High-side loadswitch  High-speed line driver  Switching circuits 1.
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PMN34UP NXP Semiconductors 20 V, 5 A P-channel Trench MOSFET 3. Ordering information Table 3. Ordering information Type number Package PMN34UP Name Description Version TSOP6 plastic surface-mounted package (TSOP6); 6 leads SOT457 4. Marking Table 4. Marking codes Type number Marking code PMN34UP ZY 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
PAGE 3
PMN34UP NXP Semiconductors 20 V, 5 A P-channel Trench MOSFET 017aaa123 120 017aaa124 120 Pder (%) Ider (%) 80 80 40 40 0 −75 Fig 1. −25 25 75 125 0 −75 175 Tj (°C) Normalized total power dissipation as a function of junction temperature Fig 2.
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PMN34UP NXP Semiconductors 20 V, 5 A P-channel Trench MOSFET 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter thermal resistance from junction to ambient Rth(j-a) Conditions in free air Min Typ Max Unit [1] - 200 230 K/W [2] - 78 90 K/W - 15 20 K/W thermal resistance from junction to solder point Rth(j-sp) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
PAGE 5
PMN34UP NXP Semiconductors 20 V, 5 A P-channel Trench MOSFET 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = -250 µA; VGS = 0 V; Tj = 25 °C -20 - - V VGSth gate-source threshold voltage ID = -250 µA; VDS = VGS; Tj = 25 °C -0.45 -0.7 -0.
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PMN34UP NXP Semiconductors 20 V, 5 A P-channel Trench MOSFET 017aaa211 –16 –4.5 V –2.5 V –2 V ID (A) 017aaa143 –10–3 ID (A) VGS = –1.8 V –12 –10–4 (1) (2) (3) –8 –1.5 V –10–5 –4 0 0 –1 –2 –3 –10–6 –0.2 –4 –5 VDS (V) Tj = 25 °C –0.4 –0.6 –0.8 VGS (V) –1.0 Tj = 25 °C; VDS = -3 V (1) minimum values (2) typical values (3) maximum values Fig 6. Output characteristics: drain current as a function of drain-source voltage; typical values 017aaa212 0.10 Fig 7.
PAGE 7
PMN34UP NXP Semiconductors 20 V, 5 A P-channel Trench MOSFET 017aaa213 –16 ID (A) (1) a (2) –12 1.5 –8 1.0 –4 0.5 (2) 0 0 017aaa147 2.0 (1) –1 –2 VGS (V) 0.0 –60 –3 0 60 120 Tj (°C) 180 VDS > ID × RDSon (1) Tj = 25 °C (2) Tj = 150 °C Fig 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values 017aaa148 –1.2 Fig 11.
PAGE 8
PMN34UP NXP Semiconductors 20 V, 5 A P-channel Trench MOSFET 017aaa150 –4.5 VDS VGS (V) ID –3.0 VGS(pl) VGS(th) VGS –1.5 QGS1 QGS2 QGS QGD QG(tot) 017aaa137 0.0 0 4 8 12 QG (nC) 16 ID = -2.4 A; VDS = -10 V; Tamb = 25 °C Fig 14. Gate-source voltage as a function of gate charge; typical values Fig 15. Gate charge waveform definitions 017aaa151 –16 IS (A) –12 (1) –8 (2) –4 –0 –0.2 –0.4 –0.6 –0.8 –1.0 –1.2 VSD (V) VGS = 0 V (1) Tj = 150 °C (2) Tj = 25 °C Fig 16.
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PMN34UP NXP Semiconductors 20 V, 5 A P-channel Trench MOSFET 8. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig 17. Duty cycle definition PMN34UP Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 9 May 2011 © NXP B.V. 2011. All rights reserved.
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PMN34UP NXP Semiconductors 20 V, 5 A P-channel Trench MOSFET 9. Package outline Plastic surface-mounted package (TSOP6); 6 leads D SOT457 E B y A HE 6 5 X v M A 4 Q pin 1 index A A1 c 1 2 3 Lp bp e w M B detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp c D E e HE Lp Q v w y mm 1.1 0.9 0.1 0.013 0.40 0.25 0.26 0.10 3.1 2.7 1.7 1.3 0.95 3.0 2.5 0.6 0.2 0.33 0.23 0.2 0.2 0.
PAGE 11
PMN34UP NXP Semiconductors 20 V, 5 A P-channel Trench MOSFET 10. Soldering 3.45 1.95 0.45 0.55 (6×) (6×) 0.95 solder lands solder resist 3.3 2.825 0.95 solder paste occupied area 0.7 (6×) Dimensions in mm 0.8 (6×) 2.4 sot457_fr Fig 19. Reflow soldering footprint for SOT457 (TSOP6) 5.3 1.5 (4×) solder lands 1.475 0.45 (2×) 5.05 solder resist occupied area 1.475 Dimensions in mm preferred transport direction during soldering 1.45 (6×) 2.85 sot457_fw Fig 20.
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PMN34UP NXP Semiconductors 20 V, 5 A P-channel Trench MOSFET 11. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes PMN34UP v.1 20110509 Product data sheet - - PMN34UP Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 9 May 2011 © NXP B.V. 2011. All rights reserved.
PAGE 13
PMN34UP NXP Semiconductors 20 V, 5 A P-channel Trench MOSFET 12. Legal information 12.1 Data sheet status Document status [1] [2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
PAGE 14
PMN34UP NXP Semiconductors 20 V, 5 A P-channel Trench MOSFET Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply.
PAGE 15
PMN34UP NXP Semiconductors 20 V, 5 A P-channel Trench MOSFET 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 9 10 11 12 12.1 12.2 12.3 12.4 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . .