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PMPB20XPE

20 V, single P-channel Trench MOSFET

30 November 2012 Product data sheet

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1. Product profile

1.1 General description

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power

DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using

Trench MOSFET technology.

1.2 Features and benefits

•

2.4 kV ESD protected

•

Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm

•

Exposed drain pad for excellent thermal conduction

•

Tin-plated 100 % solderable side pads for optical solder inspection

1.3 Applications

•

Charging switch for portable devices

•

DC-to-DC converters

•

Power management in battery-driven portable devices

•

Hard disk and computing power management

1.4 Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

drain-source voltage - - -20 V

gate-source voltage

= 25 °C

-12 - 12 V

drain current V

= -4.5 V; T

amb

= 25 °C; t ≤ 5 s [1] - - -10.3 A

Static characteristics

DSon

drain-source on-state

resistance

= -4.5 V; I

= -7.2 A; T

= 25 °C - 19 23.5 mΩ

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for

drain 6 cm

Summary of content (14 pages)

PAGE 1
PMPB20XPE 20 V, single P-channel Trench MOSFET 30 November 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits • 2.4 kV ESD protected • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.
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PMPB20XPE NXP Semiconductors 20 V, single P-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 D drain 2 D drain 3 G gate 4 S source 5 D drain 6 D drain 7 D drain 8 S source Simplified outline 1 Graphic symbol D 6 7 2 3 8 5 G 4 Transparent top view DFN2020MD-6 (SOT1220) S 017aaa259 3. Ordering information Table 3.
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PMPB20XPE NXP Semiconductors 20 V, single P-channel Trench MOSFET Symbol Parameter Conditions Tamb = 25 °C; t ≤ 5 s [1] Tsp = 25 °C Min Max Unit - 3.5 W - 12.5 W Tj junction temperature -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C Source-drain diode IS source current Tamb = 25 °C [1] - -1.
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PMPB20XPE NXP Semiconductors 20 V, single P-channel Trench MOSFET 017aaa875 -102 Limit RDSon = VDS/ID ID (A) tp = 10 µs -10 tp = 100 µs tp = 1 ms -1 tp = 10 ms tp = 100 ms DC; Tsp = 25 °C -10-1 DC; Tamb = 25 °C; drain mounting pad 6 cm2 -10-2 -10-2 -10-1 -1 -10 -102 VDS (V) IDM = single pulse Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage 6. Thermal characteristics Table 6.
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PMPB20XPE NXP Semiconductors 20 V, single P-channel Trench MOSFET 017aaa542 103 Zth(j-a) (K/W) duty cycle = 1 0.75 102 0.5 0.33 0.25 0.2 0.1 10 0.05 0.02 0.01 0 1 10-3 10-2 10-1 1 102 10 103 tp (s) FR4 PCB, standard footprint Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa543 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.33 10 0.25 0.2 0.1 0.05 0.02 0.
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PMPB20XPE NXP Semiconductors 20 V, single P-channel Trench MOSFET Symbol Parameter RDSon drain-source on-state resistance Conditions Min Typ Max Unit VGS = 8 V; VDS = 0 V; Tj = 25 °C - - 10 µA VGS = -4.5 V; ID = -7.2 A; Tj = 25 °C - 19 23.5 mΩ VGS = -4.5 V; ID = -7.2 A; Tj = 150 °C - 27 33 mΩ VGS = -2.5 V; ID = -6.4 A; Tj = 25 °C - 22 29 mΩ VGS = -1.8 V; ID = -3.7 A; Tj = 25 °C - 28 39 mΩ gfs forward transconductance VDS = -10 V; ID = -7.
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PMPB20XPE NXP Semiconductors 20 V, single P-channel Trench MOSFET 017aaa878 80 -1.4 V -1.5 V RDSon (mΩ) -1.6 V -1.7 V 017aaa879 80 -1.8 V RDSon (mΩ) 60 60 -1.9 V 40 40 Tj = 150 °C -2.5 V 20 0 20 VGS = -4.5 V 0 -4 -8 -12 -16 -20 -24 ID (A) 0 -28 Tj = 25 °C Fig. 8. Tj = 25 °C 0 -1 -2 -3 -4 VGS (V) -5 ID = -7.1 A Drain-source on-state resistance as a function of drain current; typical values Fig. 9.
PAGE 8
PMPB20XPE NXP Semiconductors 20 V, single P-channel Trench MOSFET 017aaa882 -1.2 VGS(th) (V) C (pF) max -0.8 017aaa883 104 typ Ciss 103 min -0.4 Coss Crss 0 -60 0 60 120 Tj (°C) 102 -10-1 180 ID = -0.25 mA; VDS = VGS -1 -10 VDS (V) -102 f = 1 MHz; VGS = 0 V Fig. 12. Gate-source threshold voltage as a function of junction temperature Fig. 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values 017aaa884 -4.
PAGE 9
PMPB20XPE NXP Semiconductors 20 V, single P-channel Trench MOSFET aaa-004181 -2.0 IS (A) -1.5 -1.0 Tj = 150 °C -0.5 0.0 0.0 -0.2 Tj = 25 °C -0.4 -0.6 VSD (V) -0.8 VGS = 0 V Fig. 16. Source current as a function of source-drain voltage; typical values 8. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig. 17. Duty cycle definition 9. Package outline 0.51 0.61 0.2 0.3 1.9 2.1 1.0 1.2 0.2 0.3 3 4 2 5 1 6 1.1 1.3 1.9 2.1 Dimensions in mm 0.25 0.35 0.
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PMPB20XPE NXP Semiconductors 20 V, single P-channel Trench MOSFET 10. Soldering Footprint information for reflow soldering of DFN2020MD-6 package 0.33 (6×) SOT1220 0.76 0.43 (6×) 0.66 0.53 (6×) 0.56 0.25 0.35 0.45 0.775 0.65 2.06 0.285 1.25 1.35 0.35 (6×) 1.05 0.25 (6×) 0.65 0.45 (6×) 0.9 1.1 1.2 0.935 0.935 2.5 solder land solder land plus solder paste solder paste deposit solder resist occupied area Dimensions in mm sot1220_fr Fig. 19.
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PMPB20XPE NXP Semiconductors 20 V, single P-channel Trench MOSFET 11. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PMPB20XPE v.1 20121130 Product data sheet - - PMPB20XPE Product data sheet All information provided in this document is subject to legal disclaimers. 30 November 2012 © NXP B.V. 2012.
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PMPB20XPE NXP Semiconductors 20 V, single P-channel Trench MOSFET In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 12. Legal information 12.
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PMPB20XPE NXP Semiconductors 20 V, single P-channel Trench MOSFET grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities.
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PMPB20XPE NXP Semiconductors 20 V, single P-channel Trench MOSFET 13. Contents 1 1.1 1.2 1.3 1.4 Product profile ....................................................... 1 General description .............................................. 1 Features and benefits ...........................................1 Applications .......................................................... 1 Quick reference data ............................................ 1 2 Pinning information ...................................