Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsFETsPMZB370UNE,315, MOSFET

1. Product profile

1.1 General description

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small

DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench

MOSFET technology.

1.2 Features and benefits

 Very fast switching

 Trench MOSFET technology

 Low threshold voltage

 Ultra thin package profile with

0.37 mm height

 ESD protection up to 2 kV

1.3 Applications

 Relay driver

 High-speed line driver

 Low-side loadswitch

 Switching circuits

1.4 Quick reference data

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm

PMZB370UNE

30 V, single N-channel Trench MOSFET

Rev. 1 — 8 May 2012 Product data sheet

SOT883B

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

drain-source voltage T

=25°C --30V

gate-source voltage -8 - 8 V

drain current V

=4.5V; T

amb

=25°C

[1]

- - 900 mA

Static characteristics

DSon

drain-source on-state

resistance

=4.5V; I

= 500 mA; T

= 25 °C - 370 490 mΩ

Summary of content (15 pages)

PAGE 1
83B PMZB370UNE SO T8 30 V, single N-channel Trench MOSFET Rev. 1 — 8 May 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Very fast switching  Trench MOSFET technology  Ultra thin package profile with 0.37 mm height  Low threshold voltage  ESD protection up to 2 kV 1.
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PMZB370UNE NXP Semiconductors 30 V, single N-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 G gate 2 S source 1 3 D drain 2 Graphic symbol D 3 Transparent top view G SOT883B (DFN1006B-3) S 017aaa255 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMZB370UNE DFN1006B-3 Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.
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PMZB370UNE NXP Semiconductors 30 V, single N-channel Trench MOSFET 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 °C - 30 V VGS gate-source voltage drain current ID total power dissipation Ptot 8 V VGS = 4.5 V; Tamb = 25 °C - 900 mA VGS = 4.
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PMZB370UNE NXP Semiconductors 30 V, single N-channel Trench MOSFET 017aaa566 10 Limit RDSon = VDS/ID ID (A) 1 tp = 1 μs 10-1 DC; Tsp = 25 °C tp = 10 μs DC; Tamb = 25 °C; drain mounting pad 1 cm2 10-2 10-1 1 tp = 100 μs 102 10 VDS (V) IDM = single pulse Fig 4. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage PMZB370UNE Product data sheet All information provided in this document is subject to legal disclaimers. Rev.
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PMZB370UNE NXP Semiconductors 30 V, single N-channel Trench MOSFET 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter thermal resistance from junction to ambient Rth(j-a) Conditions in free air Min Typ Max Unit [1] - 305 360 K/W [2] - 150 175 K/W - - 40 K/W thermal resistance from junction to solder point Rth(j-sp) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
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PMZB370UNE NXP Semiconductors 30 V, single N-channel Trench MOSFET 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 30 - - V VGSth gate-source threshold voltage ID = 250 µA; VDS = VGS; Tj = 25 °C 0.5 0.77 1.
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PMZB370UNE NXP Semiconductors 30 V, single N-channel Trench MOSFET 017aaa567 1.0 4.5 V ID (A) 2.5 V 017aaa568 10-3 2V VGS = 1.8 V ID (A) 0.8 10-4 0.6 min typ max 1.5 V 0.4 10-5 0.2 1V 10-6 0 0 0.5 1.0 1.5 0 2.0 0.25 0.50 0.75 VDS (V) Tj = 25 °C Fig 7. Tj = 25 °C; VDS = 5 V Output characteristics: drain current as a function of drain-source voltage; typical values 017aaa569 1.0 RDSon (Ω) 1.00 1.25 VGS (V) Fig 8.
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PMZB370UNE NXP Semiconductors 30 V, single N-channel Trench MOSFET 017aaa571 1.2 017aaa572 2.0 a ID (A) 1.5 0.8 1.0 0.4 0.5 Tj = 25 °C Tj = 150 °C 0 -60 0 0 0.5 1.0 1.5 2.0 2.5 VGS (V) 0 60 120 180 Tj (°C) VDS > ID × RDSon Fig 11. Transfer characteristics: drain current as a function of gate-source voltage; typical values 017aaa573 1.5 Fig 12. Normalized drain-source on-state resistance as a function of junction temperature; typical values 017aaa574 103 C (pF) VGS(th) (V) 1.
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PMZB370UNE NXP Semiconductors 30 V, single N-channel Trench MOSFET 017aaa575 5 VDS VGS (V) ID 4 VGS(pl) 3 VGS(th) VGS 2 QGS1 QGS2 QGS 1 QGD QG(tot) 017aaa137 0 0 0.2 0.4 0.6 0.8 1.0 QG (nC) ID = 0.5 A; VDS = 15 V; Tamb = 25 °C Fig 15. Gate-source voltage as a function of gate charge; typical values Fig 16. Gate charge waveform definitions 017aaa576 1.0 IS (A) 0.8 0.6 0.4 0.2 Tj = 25 °C Tj = 150 °C 0 0 0.2 0.4 0.6 0.8 1.0 VSD (V) VGS = 0 V Fig 17.
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PMZB370UNE NXP Semiconductors 30 V, single N-channel Trench MOSFET 8. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig 18. Duty cycle definition 9. Package outline 0.65 0.55 0.40 0.34 0.35 0.20 0.12 1 0.04 max 2 0.30 0.22 1.05 0.65 0.95 0.30 0.22 3 0.55 0.47 Dimensions in mm 11-11-02 Fig 19. Package outline SOT883B (DFN1006B-3) PMZB370UNE Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 8 May 2012 © NXP B.V. 2012.
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PMZB370UNE NXP Semiconductors 30 V, single N-channel Trench MOSFET 10. Soldering Footprint information for reflow soldering SOT883B 1.3 0.7 R0.05 (8x) 0.9 0.6 0.7 0.25 (2x) 0.3 (2x) 0.3 0.4 (2x) 0.4 solder land solder land plus solder paste solder paste deposit solder resist occupied area Dimensions in mm sot883b_fr Fig 20. Reflow soldering footprint for SOT883B (DFN1006B-3) PMZB370UNE Product data sheet All information provided in this document is subject to legal disclaimers.
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PMZB370UNE NXP Semiconductors 30 V, single N-channel Trench MOSFET 11. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes PMZB370UNE v.1 20120508 Product data sheet - - PMZB370UNE Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 8 May 2012 © NXP B.V. 2012. All rights reserved.
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PMZB370UNE NXP Semiconductors 30 V, single N-channel Trench MOSFET 12. Legal information 12.1 Data sheet status Document status[1] [2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
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PMZB370UNE NXP Semiconductors 30 V, single N-channel Trench MOSFET Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published athttp://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply.
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PMZB370UNE NXP Semiconductors 30 V, single N-channel Trench MOSFET 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 12.1 12.2 12.3 12.4 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . .