Datasheet

1. Product profile
1.1 General description
Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
 Advanced TrenchMOS provides low
RDSon and low gate charge
 High efficiency gains in switching
power converters
 Improved mechanical and thermal
characteristics
 LFPAK provides maximum power
density in a Power SO8 package
1.3 Applications
 DC-to-DC converters
 Lithium-ion battery protection
 Load switching
 Motor control
 Server power supplies
1.4 Quick reference data
PSMN016-100YS
N-channel 100 V 16.3 mΩ standard level MOSFET in LFPAK
Rev. 4 — 27 September 2011 Product data sheet
LFPAK
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175°C --100V
I
D
drain current T
mb
=25°C; V
GS
=10V;
see Figure 1
--51A
P
tot
total power dissipation T
mb
=25°C; see Figure 2 --117W
T
j
junction temperature -55 - 175 °C
Static characteristics
R
DSon
drain-source on-state
resistance
V
GS
=10V; I
D
=15A;
T
j
= 100 °C; see Figure 12
--29.3mΩ
V
GS
=10V; I
D
=15A;
T
j
=25°C; see Figure 13
- 12.7 16.3 mΩ