Datasheet

1. Product profile
1.1 General description
SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in
a plastic package using TrenchMOS technology. This product is designed and qualified for
use in computing, communications, consumer and industrial applications only.
1.2 Features and benefits
 Higher operating power due to low
thermal resistance
 Low conduction losses due to low
on-state resistance
 Suitable for high frequency
applications due to fast switching
characteristics
1.3 Applications
 DC-to-DC converters  Switched-mode power supplies
1.4 Quick reference data
PSMN070-200B
N-channel TrenchMOS SiliconMAX standard level FET
Rev. 04 — 14 December 2010 Product data sheet
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C - - 200 V
I
D
drain current T
mb
=25°C --35A
P
tot
total power dissipation - - 250 W
Static characteristics
R
DSon
drain-source on-state
resistance
V
GS
=10V; I
D
=17A;
T
j
=25°C
- 6070mΩ
Dynamic characteristics
Q
GD
gate-drain charge V
GS
=10V; I
D
=35A;
V
DS
=160V; T
j
=25°C
-28-nC