Datasheet

1. Product profile
1.1 General description
Standard level N-channel MOSFET in D2PAK (SOT404) package qualified to 175 °C. This
product is designed and qualified for use in a wide range of industrial, communications
and domestic equipment.
1.2 Features and benefits
 High efficiency due to low switching
and conduction losses
 Suitable for standard level gate drive
sources
1.3 Applications
 DC-to-DC convertors
 Load switching
 Motor control
 Server power supplies
1.4 Quick reference data
[1] Continuous current is limited by package
PSMN1R1-40BS
N-channel 40 V 1.3 mΩ standard level MOSFET in D2PAK
Rev. 2 — 29 February 2012 Product data sheet
D2PAK
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175°C --40V
I
D
drain current T
mb
=25°C; V
GS
=10V; see Figure 1
[1]
- - 120 A
P
tot
total power dissipation T
mb
=25°C; see Figure 2 - - 306 W
T
j
junction temperature -55 - 175 °C
Static characteristics
R
DSon
drain-source on-state
resistance
V
GS
=10V; I
D
=25A; T
j
= 100 °C;
see Figure 12
;see Figure 13
-1.682mΩ
V
GS
=10V; I
D
=25A; T
j
=25°C;
see Figure 13
- 1.16 1.3 mΩ
Dynamic characteristics
Q
GD
gate-drain charge V
GS
=10V; I
D
=75A; V
DS
=20V;
see Figure 14
;see Figure 15
-32-nC
Q
G(tot)
total gate charge - 136 - nC
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source
avalanche energy
V
GS
=10V; T
j(init)
=25°C; I
D
=120A;
V
sup
≤ 40 V; unclamped; R
GS
=50Ω;
t
p
=0.1ms
--1.4J