Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsFETsPSMN1R5-30YLC,115, MOSFET

1. Product profile

1.1 General description

Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is

designed and qualified for use in a wide range of industrial, communications and domestic

equipment.

1.2 Features and benefits

 High reliability Power SO8 package,

qualified to 175°C

 Optimised for 4.5V Gate drive utilising

NextPower Superjunction technology

 Ultra low QG, QGD, and QOSS for

high system efficiencies at low and

high loads

 Ultra low Rdson and low parasitic

inductance

1.3 Applications

 DC-to-DC converters

 Lithium-ion battery protection

 Load switching

 Power OR-ing

 Server power supplies

 Sync rectifier

1.4 Quick reference data

PSMN1R5-30YLC

N-channel 30 V 1.55mΩ logic level MOSFET in LFPAK using

NextPower technology

Rev. 2 — 17 May 2011 Product data sheet

LFPAK

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

drain-source

voltage

25 °C ≤ T

≤ 175 °C - - 30 V

drain current T

=25°C; V

=10V;

see Figure 1

[1]

--100A

tot

total power

dissipation

= 25 °C; see Figure 2 --179W

junction

temperature

-55 - 175 °C

Static characteristics

DSon

drain-source

on-state resistance

=4.5V; I

=25A; T

=25°C;

see Figure 12

- 1.65 2.05 mΩ

=10V; I

=25A; T

=25°C;

see Figure 12

- 1.3 1.55 mΩ

Summary of content (15 pages)

PAGE 1
LF PA K PSMN1R5-30YLC N-channel 30 V 1.55mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 2 — 17 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High reliability Power SO8 package, qualified to 175°C Optimised for 4.
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PSMN1R5-30YLC NXP Semiconductors N-channel 30 V 1.55mΩ logic level MOSFET in LFPAK using NextPower Table 1. Quick reference data …continued Symbol Parameter Conditions Min Typ Max Unit Dynamic characteristics QGD gate-drain charge VGS = 4.5 V; ID = 25 A; VDS = 15 V; see Figure 14; see Figure 15 - 8.6 - nC QG(tot) total gate charge VGS = 4.5 V; ID = 25 A; VDS = 15 V; see Figure 14; see Figure 15 - 30 - nC [1] Continuous current is limited by package. 2. Pinning information Table 2.
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PSMN1R5-30YLC NXP Semiconductors N-channel 30 V 1.55mΩ logic level MOSFET in LFPAK using NextPower 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
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PSMN1R5-30YLC NXP Semiconductors N-channel 30 V 1.55mΩ logic level MOSFET in LFPAK using NextPower 003a a f 658 103 I AL (A) (1) 102 (2) 10 1 10-1 10-3 Fig 3. 10-2 10-1 1 tAL (ms ) 10 Single pulse avalanche rating; avalanche current as a function of avalanche time 003aaf645 104 ID (A) 103 Limit RDSon = VDS / ID tp =10 μ s 102 100 μ s 1 ms 10 DC 10 ms 100 ms 1 10-1 10-1 Fig 4.
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PSMN1R5-30YLC NXP Semiconductors N-channel 30 V 1.55mΩ logic level MOSFET in LFPAK using NextPower 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base see Figure 5 - 0.71 0.84 K/W 003a a f 646 1 Zth(j-mb) (K/W) d = 0.5 0.2 10-1 0.1 0.05 0.02 δ= P 10-2 s ingle s hot tp T t tp T 10-3 10-6 Fig 5.
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PSMN1R5-30YLC NXP Semiconductors N-channel 30 V 1.55mΩ logic level MOSFET in LFPAK using NextPower 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit - - V Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 30 ID = 250 µA; VGS = 0 V; Tj = -55 °C 27 - - V VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Tj = 25 °C; see Figure 10; see Figure 11 1.05 1.51 1.
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PSMN1R5-30YLC NXP Semiconductors N-channel 30 V 1.55mΩ logic level MOSFET in LFPAK using NextPower Table 7. Characteristics …continued Symbol Parameter Conditions Min Typ Max Unit Qoss output charge VGS = 0 V; VDS = 15 V; f = 1 MHz; Tj = 25 °C - 23 - nC Source-drain diode VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; see Figure 17 - 0.8 1.
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PSMN1R5-30YLC NXP Semiconductors N-channel 30 V 1.55mΩ logic level MOSFET in LFPAK using NextPower 003a a f 653 240 003a a f 655 100 ID (A) gfs (S ) 80 180 60 120 40 Tj = 150 °C 60 Tj = 25 °C 20 0 0 0 Fig 8. 25 50 75 I D (A) 100 Forward transconductance as a function of drain current; typical values 003a a f 652 10-1 0 Fig 9.
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PSMN1R5-30YLC NXP Semiconductors N-channel 30 V 1.55mΩ logic level MOSFET in LFPAK using NextPower 003a a f 649 8 003a a f 650 2 2.6 RDS on (mΩ) a 10V VGS (V) = 2.8 6 1.5 VGS=4.5V 4 1 3.0 3.5 2 0.5 4.5 10 0 0 25 50 75 I D (A) 100 Fig 12. Drain-source on-state resistance as a function of drain current; typical values 0 -60 0 60 120 180 Fig 13.
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PSMN1R5-30YLC NXP Semiconductors N-channel 30 V 1.55mΩ logic level MOSFET in LFPAK using NextPower 003a a f 654 104 003a a f 657 100 IS (A) C (pF) Cis s 80 60 3 10 Cos s 40 Crs s 20 Tj = 150 °C 102 10-1 1 10 VDS (V) Tj = 25 °C 0 102 0 Fig 16. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values 0.3 0.6 0.9 VS D (V) 1.2 Fig 17.
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PSMN1R5-30YLC NXP Semiconductors N-channel 30 V 1.55mΩ logic level MOSFET in LFPAK using NextPower 8. Package outline Plastic single-ended surface-mounted package (LFPAK; Power-SO8); 4 leads A2 A E SOT669 C c2 b2 E1 b3 L1 mounting base b4 D1 D H L2 1 2 3 e 4 w M A b 1/2 X c e A (A 3) C A1 θ L detail X y C 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) A UNIT A1 A2 A3 b b2 1.20 0.15 1.10 0.50 4.41 0.25 1.01 0.00 0.95 0.35 3.62 mm b3 b4 2.2 2.0 0.
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PSMN1R5-30YLC NXP Semiconductors N-channel 30 V 1.55mΩ logic level MOSFET in LFPAK using NextPower 9. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes PSMN1R5-30YLC v.2 20110517 Product data sheet - PSMN1R9-25YLC v.1 - - Modifications: PSMN1R9-25YLC v.1 PSMN1R5-30YLC Product data sheet • Various changes to content. 20110502 Product data sheet All information provided in this document is subject to legal disclaimers. Rev.
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PSMN1R5-30YLC NXP Semiconductors N-channel 30 V 1.55mΩ logic level MOSFET in LFPAK using NextPower 10. Legal information 10.1 Data sheet status Document status [1] [2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
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PSMN1R5-30YLC NXP Semiconductors N-channel 30 V 1.55mΩ logic level MOSFET in LFPAK using NextPower Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply.
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PSMN1R5-30YLC NXP Semiconductors N-channel 30 V 1.55mΩ logic level MOSFET in LFPAK using NextPower 12. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 10.1 10.2 10.3 10.4 11 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .