Datasheet

PSMN1R6-30PL
N-channel 30 V 1.7 mΩ logic level MOSFET
Rev. 02 — 25 June 2009 Product data sheet
1. Product profile
1.1 General description
Logic level N-channel MOSFET in TO220 package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
 High efficiency due to low switching
and conduction losses
 Suitable for logic level gate drive
sources
1.3 Applications
 DC-to-DC converters
 Load switiching
 Motor control
 Server power supplies
1.4 Quick reference data
[1] Continuous current is limited by package.
[2] Measured 3 mm from package.
Table 1. Quick reference
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C - - 30 V
I
D
drain current T
mb
=25°C; V
GS
=10V;
see Figure 1
;
[1]
- - 100 A
P
tot
total power
dissipation
T
mb
= 25 °C; see Figure 2 - - 306 W
Dynamic characteristics
Q
GD
gate-drain charge V
GS
= 4.5 V; I
D
=25A;
V
DS
= 15 V; see Figure 14;
see Figure 15
-27-nC
Q
G(tot)
total gate charge V
GS
= 4.5 V; I
D
=25A;
V
DS
= 15 V; see Figure 14
- 101 - nC
Static characteristics
R
DSon
drain-source
on-state resistance
V
GS
=10V; I
D
=25A;
T
j
=25°C;
[2]
-1.41.7mΩ