Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsFETsPSMN2R6-30YLC,115, MOSFET

1. Product profile

1.1 General description

Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is

designed and qualified for use in a wide range of industrial, communications and domestic

equipment.

1.2 Features and benefits

 High reliability Power SO8 package,

qualified to 175°C

 Low parasitic inductance and

resistance

 Optimised for 4.5V Gate drive utilising

NextPower Superjunction technology

 Ultra low QG, QGD, and QOSS for

high system efficiencies at low and

high loads

1.3 Applications

 DC-to-DC converters

 Lithium-ion battery protection

 Load switching

 Power OR-ing

 Server power supplies

 Sync rectifier

1.4 Quick reference data

PSMN2R6-30YLC

N-channel 30 V 2.8mΩ logic level MOSFET in LFPAK using

NextPower technology

Rev. 01 — 2 May 2011 Product data sheet

LFPAK

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

drain-source voltage 25 °C ≤ T

≤ 175 °C - - 30 V

drain current T

=25°C; V

=10V;

see Figure 1

[1]

--100A

tot

total power

dissipation

= 25 °C; see Figure 2 --106W

junction temperature -55 - 175 °C

Static characteristics

DSon

drain-source

on-state resistance

=4.5V; I

=25A; T

=25°C;

see Figure 12

- 3.1 3.65 mΩ

=10V; I

=25A; T

=25°C;

see Figure 12

- 2.35 2.8 mΩ

Summary of content (15 pages)

PAGE 1
LF PA K PSMN2R6-30YLC N-channel 30 V 2.8mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 01 — 2 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High reliability Power SO8 package, qualified to 175°C Optimised for 4.
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PSMN2R6-30YLC NXP Semiconductors N-channel 30 V 2.8mΩ logic level MOSFET in LFPAK using NextPower Table 1. Symbol Quick reference data …continued Parameter Conditions Min Typ Max Unit Dynamic characteristics [1] QGD gate-drain charge VGS = 4.5 V; ID = 25 A; VDS = 15 V; see Figure 14; see Figure 15 - 5.5 - nC QG(tot) total gate charge VGS = 4.5 V; ID = 25 A; VDS = 15 V; see Figure 14; see Figure 15 - 18 - nC Continuous current is limited by package. 2. Pinning information Table 2.
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PSMN2R6-30YLC NXP Semiconductors N-channel 30 V 2.8mΩ logic level MOSFET in LFPAK using NextPower 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
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PSMN2R6-30YLC NXP Semiconductors N-channel 30 V 2.8mΩ logic level MOSFET in LFPAK using NextPower 003a a f 673 103 I AL (A) 102 (1) (2) 10 1 10-1 10-3 Fig 3. 10-2 10-1 1 tAL (ms ) 10 Single pulse avalanche rating; avalanche current as a function of avalanche time 003aaf660 104 ID (A) 103 Limit RDSon = VDS / ID tp =10 μ s 102 100 μ s 10 DC 1 ms 10 ms 100 ms 1 10-1 10-1 Fig 4.
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PSMN2R6-30YLC NXP Semiconductors N-channel 30 V 2.8mΩ logic level MOSFET in LFPAK using NextPower 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base see Figure 5 - 1.25 1.42 K/W 003aaf661 10 Zth(j-mb) (K/W) 1 δ = 0.5 0.2 0.1 10-1 δ= P 0.05 tp T 0.02 t tp single shot T 10-2 1e-6 Fig 5.
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PSMN2R6-30YLC NXP Semiconductors N-channel 30 V 2.8mΩ logic level MOSFET in LFPAK using NextPower 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit ID = 250 µA; VGS = 0 V; Tj = 25 °C 30 - - V ID = 250 µA; VGS = 0 V; Tj = -55 °C 27 - - V 1.05 1.54 1.95 V ID = 10 mA; VDS = VGS; Tj = 150 °C 0.
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PSMN2R6-30YLC NXP Semiconductors N-channel 30 V 2.8mΩ logic level MOSFET in LFPAK using NextPower Table 7. Characteristics …continued Symbol Parameter Conditions Min Typ Max Unit Qoss output charge VGS = 0 V; VDS = 15 V; f = 1 MHz; Tj = 25 °C - 17 - nC Source-drain diode VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; see Figure 17 - 0.8 1.
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PSMN2R6-30YLC NXP Semiconductors N-channel 30 V 2.8mΩ logic level MOSFET in LFPAK using NextPower 003a a f 668 160 003a a f 670 100 ID (A) gfs (S ) 80 120 60 80 40 Tj = 150 °C 40 20 0 0 0 Fig 8. Tj = 25 °C 25 50 75 Forward transconductance as a function of drain current; typical values 003a a f 667 10-1 0 I D (A) 100 Fig 9.
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PSMN2R6-30YLC NXP Semiconductors N-channel 30 V 2.8mΩ logic level MOSFET in LFPAK using NextPower 003a a f 664 12 RDS on (mΩ) 10 2.8 003a a f 665 2 3.0 VGS= 10V a 1.5 4.5V 8 6 1 VGS (V) = 3.5 4 4.5 0.5 2 5.0 10 0 0 25 50 75 I D (A) 100 Fig 12. Drain-source on-state resistance as a function of drain current; typical values 0 -60 0 60 120 180 Fig 13.
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PSMN2R6-30YLC NXP Semiconductors N-channel 30 V 2.8mΩ logic level MOSFET in LFPAK using NextPower 003a a f 669 104 003a a f 672 100 IS (A) C (pF) 80 Cis s 60 3 10 40 Cos s Tj = 150 C Tj = 25 C 20 Crs s 102 10-1 1 10 VDS (V) 0 102 0 Fig 16. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values 0.3 0.6 0.9 VS D (V) 1.2 Fig 17. Source current as a function of source-drain voltage; typical values 003a a f 444 ID (A) trr ta tb 0 0.
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PSMN2R6-30YLC NXP Semiconductors N-channel 30 V 2.8mΩ logic level MOSFET in LFPAK using NextPower 8. Package outline Plastic single-ended surface-mounted package (LFPAK; Power-SO8); 4 leads A2 A E SOT669 C c2 b2 E1 b3 L1 mounting base b4 D1 D H L2 1 2 3 e 4 w M A b 1/2 X c e A (A 3) C A1 θ L detail X y C 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) A UNIT A1 A2 A3 b b2 1.20 0.15 1.10 0.50 4.41 0.25 1.01 0.00 0.95 0.35 3.62 mm b3 b4 2.2 2.0 0.
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PSMN2R6-30YLC NXP Semiconductors N-channel 30 V 2.8mΩ logic level MOSFET in LFPAK using NextPower 9. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes PSMN2R6-30YLC v.1 20110502 Product data sheet - - PSMN2R6-30YLC Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 2 May 2011 © NXP B.V. 2011. All rights reserved.
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PSMN2R6-30YLC NXP Semiconductors N-channel 30 V 2.8mΩ logic level MOSFET in LFPAK using NextPower 10. Legal information 10.1 Data sheet status Document status [1] [2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
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PSMN2R6-30YLC NXP Semiconductors N-channel 30 V 2.8mΩ logic level MOSFET in LFPAK using NextPower Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply.
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PSMN2R6-30YLC NXP Semiconductors N-channel 30 V 2.8mΩ logic level MOSFET in LFPAK using NextPower 12. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 10.1 10.2 10.3 10.4 11 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .