Datasheet

1. Product profile
1.1 General description
Standard level N-channel MOSFET in a TO-220 package qualified to 175 °C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
1.2 Features and benefits
 High efficiency due to low switching
and conduction losses
 Suitable for standard level gate drive
sources
1.3 Applications
 DC-to-DC converters
 Load switching
 Motor control
 Server power supplies
1.4 Quick reference data
[1] Continuous current limited by package
PSMN4R3-100PS
N-channel 100 V 4.3 mΩ standard level MOSFET in TO-220
Rev. 1 — 27 October 2011 Product data sheet
TO-220AB
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C - - 100 V
I
D
drain current T
mb
=25°C; V
GS
=10V;
see Figure 1
[1]
- - 120 A
P
tot
total power dissipation T
mb
= 25 °C; see Figure 2 - - 338 W
T
j
junction temperature -55 - 175 °C
Static characteristics
R
DSon
drain-source on-state
resistance
V
GS
=10V; I
D
=25A; T
j
=100°C;
see Figure 12
-6.67.8mΩ
V
GS
=10V; I
D
=25A; T
j
=25°C;
see Figure 13
[2]
-3.74.3mΩ
Dynamic characteristics
Q
GD
gate-drain charge V
GS
=10V; I
D
=75A; V
DS
=50V;
see Figure 14
; see Figure 15
-49-nC
Q
G(tot)
total gate charge - 170 - nC
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-source
avalanche energy
V
GS
=10V; T
j(init)
=25°C;
I
D
= 120 A; V
sup
≤ 100 V;
R
GS
=50Ω; Unclamped
- - 537 mJ