Datasheet

PSMN7R0-100ES
N-channel 100V 6.8 mΩ standard level MOSFET in I2PAK.
Rev. 03 — 23 February 2010 Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in I2PAK package qualified to 175C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
 High efficiency due to low switching
and conduction losses
 Suitable for standard level gate drive
1.3 Applications
 DC-to-DC converters
 Load switching
 Motor control
 Server power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C - - 100 V
I
D
drain current T
mb
=25°C; V
GS
=10V;
see Figure 1
[1]
- - 100 A
P
tot
total power
dissipation
T
mb
= 25 °C; see Figure 2 - - 269 W
T
j
junction temperature -55 - 175 °C
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source
avalanche energy
V
GS
=10V; T
j(init)
=25°C;
I
D
= 100 A; V
sup
≤ 100 V;
unclamped; R
GS
=50Ω
- - 315 mJ
Dynamic characteristics
Q
GD
gate-drain charge V
GS
=10V; I
D
=25A;
V
DS
= 50 V; see Figure 15
and 14
-36-nC
Q
G(tot)
total gate charge V
GS
=10V; I
D
=25A;
V
DS
= 50 V; see Figure 14
and 15
- 125 - nC