SO T8 9 PXT2907A 60 V, 600 mA, PNP switching transistor 10 October 2014 Product data sheet 1. General description PNP switching transistor in a medium power flat lead SOT89 (SC-62/TO-243) SurfaceMounted Device (SMD) plastic package. NPN complement: PXT2222A 2. Features and benefits • • • High current: max. 600 mA Low voltage: max. 60 V AEC-Q101 qualified 3. Applications • Switching and linear amplification 4. Quick reference data Table 1.
PXT2907A NXP Semiconductors 60 V, 600 mA, PNP switching transistor 6. Ordering information Table 3. Ordering information Type number PXT2907A Package Name Description Version SOT89 plastic surface-mounted package; die pad for good heat transfer; SOT89 3 leads 7. Marking Table 4. Marking codes Type number Marking code PXT2907A / PXT2907A Product data sheet All information provided in this document is subject to legal disclaimers. 10 October 2014 © NXP Semiconductors N.V. 2014.
PXT2907A NXP Semiconductors 60 V, 600 mA, PNP switching transistor 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
PXT2907A NXP Semiconductors 60 V, 600 mA, PNP switching transistor 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Rth(j-sp) Min Typ Max Unit [1] - - 250 K/W [2] - - 156 K/W [3] - - 113 K/W - - 30 K/W thermal resistance from junction to solder point [1] [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
PXT2907A NXP Semiconductors 60 V, 600 mA, PNP switching transistor 006aaa236 103 Zth (K/W) duty cycle = 1 102 0.75 0.33 0.5 0.2 0.1 10 0 1 10-5 0.05 0.02 0.01 10-4 10-3 10-2 10-1 1 10 102 tp (s) 103 2 Mounted on FR4 PCB; mounting pad for collector 1 cm . Fig. 3. Transient thermal impedance as a function of pulse time; typical values 006aaa237 103 Zth (K/W) 102 duty cycle = 1 0.75 0.33 0.5 0.2 10 0.1 0.05 0.02 0 1 10-5 0.
PXT2907A NXP Semiconductors 60 V, 600 mA, PNP switching transistor 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current VCB = -50 V; IE = 0 A; Tamb = 25 °C - - -10 nA VCB = -50 V; IE = 0 A; Tj = 125 °C - - -10 µA IEBO emitter-base cut-off current VEB = -5 V; IC = 0 A; Tamb = 25 °C - - -50 nA hFE DC current gain VCE = -1 V; IC = -0.
PXT2907A NXP Semiconductors 60 V, 600 mA, PNP switching transistor aaa-013777 300 hFE aaa-013778 -0.8 IB = -12 mA -10.8 -9.6 -8.4 IC (A) (1) -0.6 -7.2 -6.0 200 -4.8 (2) -3.6 -0.4 -2.4 100 (3) 0 -10-1 -1 -0.2 -10 -102 IC (mA) 0 -103 VCE = -2 V 0 -2 -4 Fig. 6. (2) Tamb = 25 °C (3) Tamb = −55 °C -8 -10 VCE (V) Collector current as a function of collectoremitter voltage; typical values DC current gain as a function of collector current; typical values aaa-013779 -1.
PXT2907A NXP Semiconductors 60 V, 600 mA, PNP switching transistor aaa-013781 -1 VCEsat (V) VCEsat (V) -10-1 -10-1 (1) -10-2 -10-1 Fig. 9.
PXT2907A NXP Semiconductors 60 V, 600 mA, PNP switching transistor 11. Test information - IB input pulse (idealized waveform) 90 % - I Bon (100 %) 10 % - I Boff output pulse (idealized waveform) - IC 90 % - I C (100 %) 10 % t td ts tr t on tf t off 006aaa266 Fig. 11. BISS transistor switching time definition VBB RB VCC RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω R2 VI oscilloscope DUT R1 mgd624 Fig. 12. Test circuit for switching times 11.
PXT2907A NXP Semiconductors 60 V, 600 mA, PNP switching transistor 12. Package outline Plastic surface-mounted package; exposed die pad for good heat transfer; 3 leads SOT89 B D A bp3 E 1 2 HE Lp 3 c bp2 w M B bp1 e1 e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp1 bp2 bp3 c D E e e1 HE Lp w mm 1.6 1.4 0.48 0.35 0.53 0.40 1.8 1.4 0.44 0.23 4.6 4.4 2.6 2.4 3.0 1.5 4.25 3.75 1.2 0.8 0.
PXT2907A NXP Semiconductors 60 V, 600 mA, PNP switching transistor 13. Soldering 4.75 2.25 2 1.9 1.2 0.2 0.85 solder lands 1.7 1.2 4.6 solder resist 0.5 1 (3×) 4.85 occupied area 1.1 (2×) 1.5 solder paste Dimensions in mm 1.5 0.6 (3×) 0.7 (3×) 3.95 sot089_fr Fig. 14. Reflow soldering footprint for SOT89 6.6 2.4 3.5 solder lands 7.6 0.5 solder resist occupied area 1.8 (2×) Dimensions in mm preferred transport direction during soldering 1.9 1.5 (2×) 1.9 0.7 5.3 sot089_fw Fig. 15.
PXT2907A NXP Semiconductors 60 V, 600 mA, PNP switching transistor 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status PXT2907A v.6 20141010 Product data sheet Modifications: • • • 20041209 Product data sheet PXT2907A v.4 20020320 Product data sheet Product data sheet Supersedes PXT2907A v.
PXT2907A NXP Semiconductors 60 V, 600 mA, PNP switching transistor In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 15. Legal information 15.
PXT2907A NXP Semiconductors 60 V, 600 mA, PNP switching transistor No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations.
PXT2907A NXP Semiconductors 60 V, 600 mA, PNP switching transistor 16. Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 1 6 Ordering information .................................
