Data Sheet

QSB363 / QSB363GR / QSB363YR / QSB363ZR — Subminiature Plastic Silicon Infrared Phototransistor
© 2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
QSB363 / QSB363GR / QSB363YR / QSB363ZR Rev. 1.1.0 4
Physical Dimensions
Figure 7. T-3/4, 2 MM DETECTOR (ACTIVE)
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without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/packaging/
.
Notes:
1.Dimensions for all drawings are in inches (mm).
2.Tolerance of ±0.010 (0.25) on all non-nominal dimensions unless otherwise specified.
0.074 (1.9)
0.008 (0.21)
0.004 (0.11)
0.106 (2.7)
0.091 (2.3)
0.055 (1.4)
0.024 (0.6)
0.016 (0.4)
0.087 (2.2)
0.071 (1.8)
0.019 (0.5)
0.012 (0.3)
0.276 (7.0)
MIN
0.024 (0.6)
.059 (1.5)
.051 (1.3)
.118 (3.0)
.102 (2.6)
EMITTER
T-3/4