Transistors Specification Sheet

2SD0592
2
SJC00344AED
P
C
T
T
a
T
a
T
I
a
I
a
C
V
V
CE
I
CE
I
CE
C
I
I
B
V
CE(sat)
I
I
C
V
BE(sat)
V
BE(sat)
V
I
I
C
h
C
h
C
FE
h
FE
h
I
I
C
0 16040 12080
0
1.0
0.8
0.6
0.4
0.2
Collector power dissipation P
C
(
W
)
Ambient temperature T
a
(
°C
)
0 1082 64
0
1.50
1.25
1.00
0.75
0.50
0.25
T
a
= 25°C
I
B
= 10 mA
9 mA
8 mA
7 mA
6 mA
5 mA
4 mA
3 mA
2 mA
1 mA
Collector current I
C
(
A
)
Collector-emitter voltage V
CE
(
V
)
0 121082 64
0
1.2
1.0
0.8
0.6
0.4
0.2
V
CE
= 10 V
T
a
= 25°C
Base current I
B
(
mA
)
Collector current I
C
(
A
)
0.01 0.1 1 10
0.001
0.01
0.1
1
10
I
C
/ I
B
= 10
T
a
= 75°C
25°C
25°C
Collector-emitter saturation voltage V
CE(sat)
(
V
)
Collector current I
C
(
A
)
0.01 0.1 1 10
0.01
0.1
1
10
100
I
C
/ I
B
= 10
T
a
= 25°C
25°C
75°C
Base-emitter saturation voltage V
BE(sat)
(
V
)
Collector current I
C
(
A
)
0.01 0.1 1 10
0
600
500
400
300
200
100
T
a
= 75°C
25°C
25°C
V
CE
= 10 V
Forward current transfer ratio h
FE
Collector current I
C
(
A
)
f
T
f
T
f
I
I
E
C
E
C
E
ob
V
V
CB
V
CER
R
R
BE
R
BE
R
1 10 100
0
200
160
120
80
40
180
140
100
60
20
V
CB
= 10 V
T
a
= 25°C
Transition frequency f
T
(
MHz
)
Emitter current I
E
(
mA
)
1 10 100
0
50
40
30
20
10
I
E
= 0
f = 1 MHz
T
a
= 25°C
Collector-base voltage V
CB
(
V
)
Collector output capacitance
(Common base, input open circuited)
C
ob
(pF)
0.1 1 10 100
0
120
100
80
60
40
20
I
C
= 10 mA
T
a
= 25°C
Base-emitter resistance R
BE
(
k
)
Collector-emitter voltage
(Resistor between B and E)
V
CER
(V)
This product complies with the RoHS Directive (EU 2002/95/EC).