Datasheet

Ver. CEDPublication date: April 2013
1
DB3S308F
Silicon epitaxial planar type
For high speed switching circuits
 Features
 Short reverse recovery time t
rr
 Low forward voltage V
F
 Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)
Marking Symbol: 4T
Basic Part Number
Dual DB2S308 (Series)
 Packaging
DB3S308F0L Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard)
 Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Reverse voltage V
R
30 V
Repetitive peak reverse voltage V
RRM
30 V
Forward current (Average)
Single
I
F(AV)
100
mA
Series 75
Peak forward current
Single
I
FM
200
mA
Series 150
Non-repetitive peak forward surge current
*
1
I
FSM
1 A
Junction temperature T
j
125
°C
Operating ambient temperature T
opr
–40 to +85
°C
Storage temperature T
stg
–55 to +125
°C
Note)
*
1: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
 Electrical Characteristics T
a
= 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage
V
F1
I
F
= 10 mA 0.29
V
V
F2
I
F
= 100 mA 0.42
Reverse current
I
R1
V
R
= 10 V 25
mA
I
R2
V
R
= 30 V 120
Terminal capacitance C
t
V
R
= 10 V, f = 1 MHz 2.9 pF
Reverse recovery time
*
1
t
rr
I
F
= I
R
=100 mA, I
rr
= 10 mA, R
L
= 100 Ω 1.3 ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. Absolute frequency of input and output is 250 MHz
*
1: t
rr
measurement circuit
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s
= 50 Ω
Wave Form Analyzer
(SAS-8130)
R
i
= 50 Ω
t
p
= 2 µs
t
r
= 0.35 ns
δ = 0.05
I
F
= 100 mA
I
R
= 100 mA
R
L
= 100 Ω
10%
I
rr
= 10 mA
t
r
t
p
t
rr
V
R
I
F
t
t
A
Input Pulse Output Pulse
Unit: mm
1: Anode-1
2: Cathode-2
3: Cathode-1
Anode-2
Panasonic SSMini3-F3-B
JEITA SC-89
Code SOT-490
1 2
3