Datasheet

ManualsBrandsPANASONIC ManualsRectifiersDB3X313J0L

Ver. CEDPublication date: May 2013

DB3X313J

Silicon epitaxial planar type

For small current rectiﬁcation

 Features

 Low forward voltage V

and small reverse current I

 Low terminal capacitance C

 Halogen-free / RoHS compliant

(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)

Marking Symbol: 4K

Basic Part Number

Dual DB2J313 (Common anode)

 Packaging

DB3X313J0L

Embossed type (Thermo-compression sealing): 3

000 pcs / reel (standard)

 Absolute Maximum Ratings T

= 25°C

Parameter Symbol Rating Unit

Reverse voltage V

30 V

Repetitive peak reverse voltage V

RRM

30 V

Forward current (Average)

Single

F(AV)

200

Double

130

Peak forward current

Single

300

Double

220

Non-repetitive peak reverse

surge voltage

Single

FSM

1.0

Double

0.7

Junction temperature T

125

°C

Operating ambient temperature T

opr

–40 to +85

°C

Storage temperature T

stg

–55 to +125

°C

Note)

1: Value of each diode in double diodes used.

2: 50 Hz sine wave 1 cycle (Non-repetitive peak current)

 Electrical Characteristics T

= 25°C±3°C

Parameter Symbol Conditions Min Typ Max Unit

Forward voltage V

= 200 mA 0.55 V

Reverse current I

= 30 V 50

Terminal capacitance C

= 10 V, f = 1 MHz 3.8 pF

Reverse recovery time

= I

=100 mA, I

= 0.1 × I

, R

= 100 Ω

1.5 ns

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.

2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage

of current from the operating equipment.

3. Absolute frequency of input and output is 1 GHz

1: t

measurement circuit

Bias Application Unit (N-50BU)

90%

Pulse Generator

(PG-10N)

= 50 Ω

Wave Form Analyzer

(SAS-8130)

= 50 Ω

= 2 µs

= 0.35 ns

δ = 0.05

= 100 mA

= 100 Ω

10%

Input Pulse Output Pulse

= 0.1 × I

Unit: mm

1: Cathode-1

2: Cathode-2

3: Anode-1

Anode-2

Panasonic Mini3-G3-B

JEITA SC-59A

Code TO-236AA/SOT-23

1 2

Summary of content (4 pages)

PAGE 1
DB3X313J Silicon epitaxial planar type For small current rectiﬁcation Unit: mm  Features  Low forward voltage VF and small reverse current IR  Low terminal capacitance Ct  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)  Marking Symbol: 4K  Basic Part Number Dual DB2J313 (Common anode)  Packaging DB3X313J0L Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard)  Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage Repetitive peak reverse vo
PAGE 2
DB3X313J DB3X313J_ IF-VF IR  VR 10−2 Pulse test Reverse current IR (A) Forward current IF (A) 25°C 10−5 100°C 10−3 10−6 85°C 10−7 25°C 10−4 0.2 −40°C 20 15 10 5 10−8 −40°C 0 Ta = 25°C 100°C 85°C 10−4 10−2 10−5 Ta = 125°C 10−3 Ta = 125°C Ct  VR 25 Terminal capacitance Ct (pF) 1 10−1 DB3X313J_Ct-VR DB3X313J_ IR-VR IF  VF 0.4 Forward voltage VF (V) 0.6 10−9 0 10 20 Reverse voltage VR (V) Ver.
PAGE 3
DB3X313J Mini3-G3-B Unit: mm  Land Pattern (Reference) (Unit: mm) Ver.
PAGE 4
Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed.