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Product Standards
Transistors with Built-in Resistor
DRA2123J0L
Absolute Maximum Ratings Ta = 25 C
Electrical Characteristics Ta = 25 C 3 C
Note
)
1.
Page
2.2 +30%
k
Resistance ratio
R1/R2 0.037
0.047 0.057 -
Input resistance
R1 -30%
-0.4 V
-1.2 V
Input voltage
Vi(on) VCE = -0.2 V, IC = -5 mA
Vi(off) VCE = -5 V, IC = -100 μA
-
Collector-emitter saturation voltage
VCE(sat) IC = -10 mA, IB = -0.5 mA -0.25 V
Forward current transfer ratio
hFE VCE = -10 V, IC = -5 mA 80
-0.5 μA
Emitter-base cutoff current (Collector open)
IEBO VEB = -6 V, IC = 0 -0.2 mA
Collector-emitter cutoff current (Base open)
ICEO VCE = -50 V, IB = 0
V
Collector-base cutoff current (Emitter open)
ICBO VCB = -50 V, IE = 0 -0.1 μA
Collector-emitter voltage (Base open)
VCEO IC = -2 mA, IB = 0 -50
Max Unit
Collector-base voltage (Emitter open)
VCBO IC = -10 μA, IE = 0 -50 V
Symbol Conditions
Storage temperature Tstg -55 to
Junction temperature Tj 150 °C
Total power dissipation PT 200 mW
Collector current IC -100 mA
Collector-emitter voltage (Base open) VCEO -50 V
Collector-base voltage (Emitter open) VCBO -50 V
Internal Connection
Resistance
value
R1
2.2
k
R2 47
k
1of3
Unit: mm
Min Typ
SC-59A
Collector
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
Low collector-emitter saturation voltage Vce(sat)
DRA2123J0L
Silicon PNP epitaxial planar type
For digital circuits
Complementary to DRC2123J
Features
Marking Symbol:
L4
Code
Base
Emitter
TO-236AA/SOT-23
Panasonic
Packaging
Mini3-G3-B
JEITA
Parameter Symbol Rating Unit
1.
2.
3.
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
+85 °COperating ambient temperature Topr -40 to
+150 °C
Parameter
C
B
R
1
R
2
E
2.8
2.9
1.1
1.5
0.4
1.9
0.16
1
3
(0.95)(0.95)
2
Doc No.
TT4-EA-11722
Revision.
3
Established
:
Revised
:

Summary of content (4 pages)