Schottky Barrier Diodes Specification Sheet

Schottky Barrier Diodes (SBD)
1
Publication date: April 2004 SKH00033BED
MA2YD21
Silicon epitaxial planar type
For high frequency rectification
■ Features
•
Forward current (Average) I
F(AV)
= 1 A rectification is possible
•
Low forward voltage: V
F
< 0.4 V
■ Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Reverse voltage V
R
15 V
Repetitive peak reverse voltage V
RRM
15 V
Forward current (Average)
*
1
I
F(AV)
1.0 A
Non-repetitive peak forward I
FSM
3A
surge current
*
2
Junction temperature T
j
125 °C
Storage temperature T
stg
−55 to +125 °C
Marking Symbol: 2X
1: Anode
2: Cathode Mini2-F1 Package
Unit: mm
5˚
1.6
±0.1
1
2
0.80
±0.05
0.55 ±0.1
0.16
+0.1
–0.06
3.5
±0.1
2.6
±0.1
0.45 ±0.1
5˚
0 to 0.1
0 to 0.3
0 to 0.1
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
F
I
F
= 1 A 0.4 V
Reverse current I
R
V
R
= 6 V 1.5 mA
Terminal capacitance C
t
V
R
= 0 V, f = 1 MHz 180 pF
Reverse recovery time
*
t
rr
I
F
= I
R
= 100 mA 12 ns
I
rr
= 10 mA, R
L
= 100 Ω
■ Electrical Characteristics T
a
= 25°C ± 3°C
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s
= 50 Ω
Wave Form Analyzer
(SAS-8130)
R
i
= 50 Ω
t
p
= 2 µs
t
r
= 0.35 ns
δ = 0.05
I
F
= 100 mA
I
R
= 100 mA
R
L
= 100 Ω
10%
I
rr
= 10 mA
t
r
t
p
t
rr
V
R
I
F
t
t
A
Input Pulse
Output Pulse
Note)
*
1: Mounted on an alumina PC board
*
2: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3.
*
: t
rr
measurement circuit
This product complies with the RoHS Directive (EU 2002/95/EC).