ESD Diodes Specification Sheet

ESD Diodes
1
Publication date: September 2007 SKE00035AED
This product complies with the RoHS Directive (EU 2002/95/EC).
MAZWxxxHG Series
Silicon planar type
For surge absorption circuit
■ Features
•
Two elements anode-common type
■ Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Total power dissipation
*
P
tot
150 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
■ Common Electrical Characteristics T
a
= 25°C ± 3°C
Note)
*
:P
tot
= 150 mW achieved with a printed circuit board.
Parameter Symbol Conditions Min Typ Max Unit
Zener voltage
*
V
Z
I
Z
Specified value V
Zener rise operating resistance R
ZK
I
Z
Specified value Ω
Zener operating resistance R
Z
I
Z
Specified value Ω
Reverse current I
R
V
R
Specified value µA
Refer to the list of the
electrical characteristics
within part numbers
1
3
2
Note) 1. Measuring methods are based JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Electrostatic breakdown voltage is ±10 kV
Test method: IEC1000-4-2 (C = 150 pF, R = 330 Ω, Contact discharge: 10 times)
3.
*
: The temperature must be controlled 25°C for V
Z
mesurement.
V
Z
value measured at other temperature must be adjusted to V
Z
(25°C)
V
Z
guaranted 20 ms after current flow.
■ Package
•
Code
SSSMini3-F2
•
Pin Name
1: Cathode 1
2: Cathode 2
3: Anode 1, 2
■ Internal Connection