Silicon NPN Epitaxial Planar Type Installation Guide

UP05C8B
2 SJJ00333AED
 Electrical Characteristics T
a
= 25°C±3°C
 Tr
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
= 10 mA, I
E
= 0 30 V
Emitter-base voltage (Collector open) V
EBO
I
E
= 10 mA, I
C
= 0 3 V
Base-emitter voltage V
BE
V
CE
= 6 V, I
C
= 1 mA 720 mV
Forward current transfer ratio h
FE
V
CE
= 6 V, I
C
= 1 mA 65 160

Reverse transfer capacitance
(Common emitter)
C
re
V
CB
= 6 V, I
E
= -1 mA, f = 10.7 MHz 0.8 pF
Transition frequency f
T
V
CB
= 6 V, I
E
= -1 mA, f = 200 MHz 640 MHz
Noise figure NF V
CB
= 6 V, I
E
= -1 mA, f = 100 MHz 3.3 dB
Power gain G
P
V
CB
= 6 V, I
E
= -1 mA, f = 100 MHz 24 dB
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
 CCD Load Device
Parameter Symbol Conditions Min Typ Max Unit
Pinchi off current I
P
V
DS
= 10 V, V
G
= 0 3.5 5.5 mA
Output impedance Z
O
V
DS
= 10 V, V
G
= 0 0.05 MW
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
P
T
 T
a
Common characteristics chart
0 40 80 120
0
140
120
100
80
40
20
60
Total power dissipation P
T
(
mW
)
Ambient temperature T
a
(
°C
)
UN05C8B_P
T
-T
a