Silicon NPN Epitaxial Planar Type Installation Guide

UP05C8B
SJJ00333AED 3
I
C
 V
CE
I
C
 I
B
I
C
 V
BE
V
CE(sat)
 I
C
h
FE
 I
C
Characteristics charts of Tr
0 42 8 106 12
0
10
8
12
2
6
4
Collector current I
C
(
mA
)
Collector-emitter voltage V
CE
(
V
)
UP05C8B_I
C
-V
CE
80 µA
40 µA
20 µA
T
a
= 25°C
I
B
= 100 µA
60 µA
0.1 1 10
100
0.1
1
0.01
UP05C8B_ V
CE(sat)
- I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
Collector current I
C
(mA)
I
C
/ I
B
= 10
T
a
= 85°C
25°C
−25°C
1 10 100
20
120
80
100
60
40
140
0
UP05C8B_ h
FE
- I
C
Forward current transfer ratio h
FE
Collector current I
C
(mA)
T
a
= 85°C
−25°C
25°C
0 0.40.2 0.80.6 1.0
0
35
40
30
45
5
10
20
25
15
Collector current I
C
(
mA
)
Base current I
B
(
mA
)
UP05C8B_I
C
-V
CE
V
CE
= 6 V
0 0.4 0.60.2 1.20.8 1.0 1.4
0
40
50
10
20
30
Collector current I
C
(
mA
)
Base-emitter voltage V
BE
(
V
)
UP05C8B_I
C
-V
BE
V
CE
= 6 V
T
a
= 85°C
−25°C
25°C
I
P
 V
DS
Characteristics charts of CCD load device
0 42 14106 8 12 16
0
3.5
4.0
3.0
4.5
0.5
1.0
2.0
2.5
1.5
Peak current I
P
(
mA
)
Drain-source voltage V
DS
(
V
)
UP05C8B_I
P
-V
DS
V
G
= 0