Silicon NPN Epitaxial Planar Type Installation Guide

2SC1318
2 SJC00420AED
This product complies with the RoHS Directive (EU 2002/95/EC).
P
C
 T
a
I
C
 V
CE
I
C
 I
B
V
CE(sat)
 I
C
V
BE(sat)
 I
C
h
FE
 I
C
0 16040 12080
0
800
600
200
400
Collector power dissipation P
C
(mW)
Ambient temperature T
a
(°C)
2SC1318_PC-Ta
0 20164 128
0
0.8
0.6
0.2
0.5
0.7
0.4
0.1
0.3
T
a
= 25°C
I
B
= 10 mA
9 mA
8 mA
7 mA
6 mA
5 mA
4 mA
3 mA
2 mA
1 mA
Collector current I
C
(A)
Collector-emitter voltage V
CE
(V)
2SC1318_IC-VCE
0.01 0.1 1 10
0.01
0.1
1
10
100
I
C
/ I
B
= 10
T
a
= 75°C
25°C
−25°C
Collector-emitter saturation voltage V
CE(sat)
(V)
Collector current I
C
(A)
2SC1318_VCE(sat)-IC
0.01 0.1 1 10
0.01
0.1
1
10
100
I
C
/ I
B
= 10
T
a
= 75°C
−25°C
25°C
Base-emitter saturation voltage V
BE(sat)
(V)
Collector current I
C
(A)
2SC1318_VBE(sat)-IC
0.01 0.1 1 10
0
300
250
200
150
100
50
V
CE
= 10 V
T
a
= 75°C
25°C
−25°C
Forward current transfer ratio h
FE
Collector current I
C
(A)
2SC1318_hFE-IC
−1 −10 −100
0
240
200
160
120
80
40
V
CB
= 10 V
T
a
= 25°C
Transition frequency f
T
(MHz)
Emitter current I
E
(mA)
2SC1318_fT-IE
1 10 100
0
12
10
8
6
4
2
I
E
= 0
f = 1 MHz
T
a
= 25°C
Collector-base voltage V
CB
(V)
2SC1318_Cob-VCB
Collector output capacitance (Common base, input open circuited)
C
ob
(pF)
1 10 100 1000
0
120
100
80
60
40
20
I
C
= 2 mA
T
a
= 25°C
Base-emitter resistance R
BE
(kΩ)
2SC1318_VCER-RBE
Collector-emitter voltage (Resistor between B and E)
V
CER
(V)
0 1082 64
0
0.8
0.6
0.2
0.5
0.7
0.4
0.1
0.3
V
CE
= 10 V
T
a
= 25°C
Base current I
B
(mA)
Collector current I
C
(A)
2SC1318_IC-IB
f
T
 I
E
C
ob
 V
CB
V
CER
 R
BE