INTEGRATED CIRCUITS DATA SHEET TDA1562Q; TDA1562ST; TDA1562SD 70 W high efficiency power amplifier with diagnostic facility Preliminary specification Supersedes data of 1998 Apr 07 2003 Feb 12
Philips Semiconductors Preliminary specification 70 W high efficiency power amplifier with diagnostic facility TDA1562Q; TDA1562ST; TDA1562SD FEATURES • Fast mute on supply voltage drops • Very high output power, operating from a single low supply voltage • Quick start option (e.g.
Philips Semiconductors Preliminary specification 70 W high efficiency power amplifier with diagnostic facility SYMBOL PARAMETER TDA1562Q; TDA1562ST; TDA1562SD CONDITIONS MIN. TYP. MAX. UNIT SVRR supply voltage ripple rejection on and mute 55 63 − dB CMRR common mode rejection ratio on 56 80 − dB ISRR input signal rejection ratio mute 80 100 − dB Vn(o) noise output voltage on − 100 150 µV Note 1.
Philips Semiconductors Preliminary specification 70 W high efficiency power amplifier with diagnostic facility TDA1562Q; TDA1562ST; TDA1562SD BLOCK DIAGRAM C1− handbook, full pagewidth 3 STAT MODE 16 4 CLASS-B CLASS-H FAST MUTE disable 75 kΩ − PREAMP + 2 OUT+ DYNAMIC DISTORTION DETECTOR 8 11 POWERSTAGE DIAG OUT− VP* 15 kΩ SGND LOAD DETECTOR 14 17 7 DIAGNOSTIC INTERFACE 75 kΩ Vref TDA1562 POWERSTAGE FEEDBACK CIRCUIT IN− 10 CURRENT PROTECTION LIFT-SUPPLY + PREAMP − VP2
Philips Semiconductors Preliminary specification 70 W high efficiency power amplifier with diagnostic facility TDA1562Q; TDA1562ST; TDA1562SD PINNING SYMBOL PIN DESCRIPTION IN+ 1 signal input (positive) IN− 2 signal input (negative) C1− 3 negative terminal of lift electrolytic capacitor 1 MODE 4 mode select input C1+ 5 positive terminal of lift electrolytic capacitor 1 PGND1 6 power ground 1 OUT+ 7 positive output DIAG 8 diagnostic output (open-collector) VP1 9 supply voltag
Philips Semiconductors Preliminary specification 70 W high efficiency power amplifier with diagnostic facility TDA1562Q; TDA1562ST; TDA1562SD FUNCTIONAL DESCRIPTION Status I/O (pin STAT) The TDA1562 contains a mono class-H BTL output power amplifier. At low output power, up to 18 W, the device operates as a normal BTL amplifier. When a larger output voltage swing is required, the internal supply voltage is lifted by means of the external electrolytic capacitors.
Philips Semiconductors Preliminary specification 70 W high efficiency power amplifier with diagnostic facility handbook, full pagewidth supply voltage TDA1562Q; TDA1562ST; TDA1562SD on mute 0 HIGH mode select input MID LOW Vref reference voltage VRT 0 HIGH status I/O input MID LOW HIGH status I/O output MID LOW output voltage across load class-H (Tc < 120 °C) class-B (Tc > 120 °C) 0 quick start mute zero crossing change class-B/H operation fast mute function zero crossing mute function
Philips Semiconductors Preliminary specification 70 W high efficiency power amplifier with diagnostic facility TDA1562Q; TDA1562ST; TDA1562SD Diagnostic output (pin DIAG) TEMPERATURE DETECTION DYNAMIC DISTORTION DETECTOR (DDD) Just before the temperature protection becomes active the diagnostic output becomes continuously LOW. At the onset of clipping of the output stages, the DDD becomes active.
Philips Semiconductors Preliminary specification 70 W high efficiency power amplifier with diagnostic facility handbook, full pagewidth maximum output voltage swing TDA1562Q; TDA1562ST; TDA1562SD status I/O: high class-H status I/O: open class-B 0 HIGH diagnostic output LOW HIGH status I/O output MID LOW 100 120 145 150 160 Tj (°C) MGL266 Fig.5 Behaviour as a function of temperature. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134).
Philips Semiconductors Preliminary specification 70 W high efficiency power amplifier with diagnostic facility TDA1562Q; TDA1562ST; TDA1562SD QUALITY SPECIFICATION Quality in accordance with “SNW-FQ-611D”, if this type is used as an audio amplifier. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS Rth(j-c) thermal resistance from junction to case Rth(j-a) thermal resistance from junction to ambient VALUE UNIT 1.5 K/W 40 K/W in free air DC CHARACTERISTICS VP = 14.
Philips Semiconductors Preliminary specification 70 W high efficiency power amplifier with diagnostic facility SYMBOL PARAMETER TDA1562Q; TDA1562ST; TDA1562SD CONDITIONS Vth2+ threshold voltage 2+ class-B → class-H Vth2− threshold voltage 2− class-H → class-B VstH2 hysteresis (Vth2+ − Vth1−) MIN. − TYP. − MAX. 4.2 UNIT V 3.
Philips Semiconductors Preliminary specification 70 W high efficiency power amplifier with diagnostic facility handbook, full pagewidth TDA1562Q; TDA1562ST; TDA1562SD on mute standby VmsH2 VmsH1 Vth1− Vth2− Vth1+ Vms Vth2+ MGL268 Fig.7 Mode select transfer characteristic. handbook, full pagewidth class-H class-B fast mute VstH1 Vth1− VstH2 Vth2− Vth1+ Vst Vth2+ MGL269 Fig.8 Status I/O transfer characteristic.
Philips Semiconductors Preliminary specification 70 W high efficiency power amplifier with diagnostic facility TDA1562Q; TDA1562ST; TDA1562SD AC CHARACTERISTICS VP = 14.4 V; RL = 4 Ω; Rs = 0 Ω; f = 1 kHz; Tamb = 25 °C; measurements in accordance with Fig.9; unless otherwise specified. SYMBOL Po PARAMETER output power CONDITIONS MIN. TYP. MAX. UNIT class-B; THD = 10% 16 19 − W class-H; THD = 10% 60 70 − W class-H; THD = 0.
Philips Semiconductors Preliminary specification 70 W high efficiency power amplifier with diagnostic facility TDA1562Q; TDA1562ST; TDA1562SD TEST AND APPLICATION INFORMATION 4700 µF C1− STAT MODE 100 nF 16 4 CLASS-B CLASS-H FAST MUTE 1/2*Rs 75 kΩ − PREAMP + 2 IN− 7 OUT+ LOAD DETECTOR + VP 10 kΩ DYNAMIC DISTORTION DETECTOR 8 RL = 4Ω DIAG 11 POWERSTAGE OUT− VP* 14 Vref 15 kΩ 17 TDA1562 POWERSTAGE FEEDBACK CIRCUIT 1/2*Rs CURRENT PROTECTION LIFT-SUPPLY DIAGNOSTIC INTERFACE au
Philips Semiconductors Preliminary specification 70 W high efficiency power amplifier with diagnostic facility TDA1562Q; TDA1562ST; TDA1562SD + VP handbook, full pagewidth 9 Ci Ci VCM 10 supply 7 1 RL TDA1562 11 2 14 SGND 17 PGND1 PGND2 6 12 GND MGL270 Fig.10 CMRR test set-up.
Philips Semiconductors Preliminary specification 70 W high efficiency power amplifier with diagnostic facility TDA1562Q; TDA1562ST; TDA1562SD PACKAGE OUTLINES DBS17P: plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm) SOT243-1 non-concave Dh x D Eh view B: mounting base side d A2 B j E A L3 L Q c 1 v M 17 e1 Z bp e e2 m w M 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A2 bp c D (1) d Dh E (1) e mm 17.0 15.5 4.6 4.4 0.75 0.60 0.
Philips Semiconductors Preliminary specification 70 W high efficiency power amplifier with diagnostic facility TDA1562Q; TDA1562ST; TDA1562SD RDBS17P: plastic rectangular-DIL-bent-SIL power package; 17 leads (row spacing 2.54 mm) SOT577-2 non-concave Dh x D Eh view B: mounting base side d A2 B j E A L 1 e2 17 e1 Z w M bp e c v M 0 5 Q L1 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A2 bp c D(1) d Dh E(1) e e1 e2 Eh j L mm 13.5 4.6 4.4 0.75 0.
Philips Semiconductors Preliminary specification 70 W high efficiency power amplifier with diagnostic facility TDA1562Q; TDA1562ST; TDA1562SD RDBS17P: plastic rectangular-DIL-bent-SIL power package; 17 leads (row spacing 2.54 mm) SOT577-2 non-concave Dh x D Eh view B: mounting base side d A2 B j E A L 1 e2 17 e1 Z w M bp e c v M 0 5 Q L1 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A2 bp c D(1) d Dh E(1) e e1 e2 Eh j L mm 13.5 4.6 4.4 0.75 0.
Philips Semiconductors Preliminary specification 70 W high efficiency power amplifier with diagnostic facility TDA1562Q; TDA1562ST; TDA1562SD RDBS17P: plastic rectangular-DIL-bent-SIL (reverse bent) power package; 17 leads (row spacing 2.
Philips Semiconductors Preliminary specification 70 W high efficiency power amplifier with diagnostic facility TDA1562Q; TDA1562ST; TDA1562SD The total contact time of successive solder waves must not exceed 5 seconds. SOLDERING Introduction to soldering through-hole mount packages The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (Tstg(max)).
Philips Semiconductors Preliminary specification 70 W high efficiency power amplifier with diagnostic facility TDA1562Q; TDA1562ST; TDA1562SD DATA SHEET STATUS LEVEL DATA SHEET STATUS(1) PRODUCT STATUS(2)(3) Development DEFINITION I Objective data II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date.
Philips Semiconductors Preliminary specification 70 W high efficiency power amplifier with diagnostic facility TDA1562Q; TDA1562ST; TDA1562SD NOTES 2003 Feb 12 22
Philips Semiconductors Preliminary specification 70 W high efficiency power amplifier with diagnostic facility TDA1562Q; TDA1562ST; TDA1562SD NOTES 2003 Feb 12 23
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