Datasheet
Table Of Contents
- Table 1. Main characteristics
- Table 2. Device summary
- 1 Characteristics
- Table 3. Absolute maximum ratings (Tj = 25 °C unless otherwise stated)
- Table 4. Electrical characteristics (Tj = 25 °C, unless otherwise stated)
- Table 5. Static characteristics
- Table 6. Thermal resistance
- Figure 1. Maximum power dissipation versus RMS on-state current (full cycle)
- Figure 2. RMS on-state current versus case temperature (full cycle)
- Figure 3. RMS on-state current versus ambient temperature (printed circuit board FR4, copper thickness: 35µm) (full cycle)
- Figure 4. Relative variation of thermal impedance versus pulse duration
- Figure 5. On-state characteristics (maximum values)
- Figure 6. Surge peak on-state current versus number of cycles
- Figure 7. Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms and corresponding value of I2t
- Figure 8. Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values)
- Figure 9. Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values)
- Figure 10. Relative variation of critical rate of decrease of main current versus junction temperature
- Figure 11. DPAK thermal resistance junction to ambient versus copper surface under tab (printed circuit board FR4, copper thickness: 35 µm)
- 2 Package information
- Figure 12. DPAK dimension definitions
- Table 7. DPAK dimension values
- Figure 13. Footprint (dimensions in mm)
- Figure 14. ISOWATT220AB dimension definitions
- Table 8. ISOWATT220AB dimension values
- Figure 15. IPAK dimension definitions
- Table 9. IPAK dimension values
- Figure 16. TO-220AB (NIns. & Ins. 20-up) dimension definitions
- Table 10. TO-220AB (NIns. & Ins. 20-up) dimension values
- 3 Ordering information
- 4 Revision history
