Datasheet

Characteristics T4 series
2/17 DocID7699 Rev 5
1 Characteristics
Table 3. Absolute maximum ratings (T
j
= 25 °C unless otherwise stated)
Symbol Parameter Value Unit
I
T(rms)
On-state rms current
(full sine wave)
IPAK, DPAK,
TO-220AB
T
c
= 110 °C
4A
ISOWATT220AB
T
c
= 105 °C
I
TSM
Non repetitive surge peak on-state
current (full cycle, T
j
initial = 25 °C)
F = 50 Hz t = 20 ms 30
A
F = 60 Hz t = 16.7 ms 31
I
²
tI
²
t value for fusing t
p
= 10 ms 5.1 A
²
s
dI/dt
Critical rate of rise of on-state
current I
G
= 2 x I
GT
, t
r
≤ 100 ns
F = 120 Hz
T
j
= 125 °C
50 A/µs
I
GM
Peak gate current t
p
= 20 µs T
j
= 125 °C 4 A
P
G(AV)
Average gate power dissipation T
j
= 125 °C 1 W
T
stg
T
j
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 150
°C
Table 4. Electrical characteristics (T
j
= 25 °C, unless otherwise stated)
Symbol Test conditions Quadrant
Value Unit
T405 T410 T435
I
GT
(1)
1. Minimum I
GT
is guaranteed at 5% of I
GT
max.
V
D
= 12 V, R
L
= 30 Ω I - II - III Max. 5 10 35 mA
V
GT
V
D
= 12 V, R
L
= 30 Ω
I - II - III Max. 1.3 V
V
GD
V
D
= V
DRM
, R
L
= 3.3 k Ω , T
j
= 125 °C I - II - III Min. 0.2 V
I
H
(2)
2. For both polarities of A2 referenced to A1
I
T
= 100 mA Max. 10 15 35 mA
I
L
I
G
= 1.2 I
GT
I - III Max. 10 25 50
mA
II Max. 15 30 60
dV/dt
(2)
V
D
= 67% V
DRM
, gate open T
j
= 125 °C Min. 20 40 400 V/µs
(dI/dt)c
(2)
(dV/dt)c = 0.1 V/µs
T
j
= 125 °C Min.
1.8 2.7
A/ms(dV/dt)c = 10 V/µs 0.9 2.0
(without snubber) 2.5