Datasheet
Table Of Contents
- Table 1. Main characteristics
- Table 2. Device summary
- 1 Characteristics
- Table 3. Absolute maximum ratings (Tj = 25 °C unless otherwise stated)
- Table 4. Electrical characteristics (Tj = 25 °C, unless otherwise stated)
- Table 5. Static characteristics
- Table 6. Thermal resistance
- Figure 1. Maximum power dissipation versus RMS on-state current (full cycle)
- Figure 2. RMS on-state current versus case temperature (full cycle)
- Figure 3. RMS on-state current versus ambient temperature (printed circuit board FR4, copper thickness: 35µm) (full cycle)
- Figure 4. Relative variation of thermal impedance versus pulse duration
- Figure 5. On-state characteristics (maximum values)
- Figure 6. Surge peak on-state current versus number of cycles
- Figure 7. Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms and corresponding value of I2t
- Figure 8. Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values)
- Figure 9. Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values)
- Figure 10. Relative variation of critical rate of decrease of main current versus junction temperature
- Figure 11. DPAK thermal resistance junction to ambient versus copper surface under tab (printed circuit board FR4, copper thickness: 35 µm)
- 2 Package information
- Figure 12. DPAK dimension definitions
- Table 7. DPAK dimension values
- Figure 13. Footprint (dimensions in mm)
- Figure 14. ISOWATT220AB dimension definitions
- Table 8. ISOWATT220AB dimension values
- Figure 15. IPAK dimension definitions
- Table 9. IPAK dimension values
- Figure 16. TO-220AB (NIns. & Ins. 20-up) dimension definitions
- Table 10. TO-220AB (NIns. & Ins. 20-up) dimension values
- 3 Ordering information
- 4 Revision history
DocID7699 Rev 5 3/17
T4 series Characteristics
Table 5. Static characteristics
Symbol Test conditions Value Unit
V
TM
(1)
I
TM
= 8.5 A, t
p
= 380 µs T
j
= 25 °C Max. 1.56 V
V
t0
(1)
Threshold voltage T
j
= 125 °C Max. 0.89 V
R
d
(1)
Dynamic resistance T
j
= 125 °C Max. 120 mΩ
I
DRM
I
RRM
V
DRM
= V
RRM
T
j
= 25 °C
Max.
5µA
T
j
= 125 °C 1 mA
1. For both polarities of A2 referenced to A1
Table 6. Thermal resistance
Symbol Parameter Value Unit
R
th(j-c)
Junction to case (AC)
IPAK, DPAK,TO-220AB 2.6
°C/W
ISOWATT220AB 4.0
R
th(j-a)
Junction to ambient (DC)
S
(1)
= 0.5
cm²
DPAK 70
°C/W
Junction to ambient (DC)
ISOWATT220AB, TO-220AB 60
IPAK 100
1. S = Copper surface under tab.