Datasheet
Table Of Contents
- Table 1. Main characteristics
- Table 2. Device summary
- 1 Characteristics
- Table 3. Absolute maximum ratings (Tj = 25 °C unless otherwise stated)
- Table 4. Electrical characteristics (Tj = 25 °C, unless otherwise stated)
- Table 5. Static characteristics
- Table 6. Thermal resistance
- Figure 1. Maximum power dissipation versus RMS on-state current (full cycle)
- Figure 2. RMS on-state current versus case temperature (full cycle)
- Figure 3. RMS on-state current versus ambient temperature (printed circuit board FR4, copper thickness: 35µm) (full cycle)
- Figure 4. Relative variation of thermal impedance versus pulse duration
- Figure 5. On-state characteristics (maximum values)
- Figure 6. Surge peak on-state current versus number of cycles
- Figure 7. Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms and corresponding value of I2t
- Figure 8. Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values)
- Figure 9. Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values)
- Figure 10. Relative variation of critical rate of decrease of main current versus junction temperature
- Figure 11. DPAK thermal resistance junction to ambient versus copper surface under tab (printed circuit board FR4, copper thickness: 35 µm)
- 2 Package information
- Figure 12. DPAK dimension definitions
- Table 7. DPAK dimension values
- Figure 13. Footprint (dimensions in mm)
- Figure 14. ISOWATT220AB dimension definitions
- Table 8. ISOWATT220AB dimension values
- Figure 15. IPAK dimension definitions
- Table 9. IPAK dimension values
- Figure 16. TO-220AB (NIns. & Ins. 20-up) dimension definitions
- Table 10. TO-220AB (NIns. & Ins. 20-up) dimension values
- 3 Ordering information
- 4 Revision history
Characteristics T4 series
4/17 DocID7699 Rev 5
Figure 1. Maximum power dissipation versus
RMS on-state current (full cycle)
Figure 2. RMS on-state current versus case
temperature (full cycle)
Figure 3. RMS on-state current versus ambient
temperature (printed circuit board FR4, copper
thickness: 35µm) (full cycle)
Figure 4. Relative variation of thermal
impedance versus pulse duration
Figure 5. On-state characteristics (maximum
values)
Figure 6. Surge peak on-state current versus
number of cycles
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
0
1
2
3
4
5
6
P(W)
I (A)
T(RMS)
0 25 50 75 100 125
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
I (A)
T(RMS)
T (°C)
C
TO-220AB / DPAK / IPAK
ISOWATT220AB
0 25 50 75 100 125
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
I (A)
T(RMS)
T (°C)
C
DPAK
(S=0.5CM )
2
1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
1E-2
1E-1
1E+0
K=[Z /R
th th
]
t (s)
p
R
th(j-c)
R
th(j-a)
TO-220AB / DPAK / IPAK
DPAK / IPAK
ISOWATT220AB
TO-220AB / ISOWATT220AB
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0.1
1.0
10.0
30.0
I (A)
TM
V (V)
TM
T max.
V = 0.90V
R = 120 m
j
to
d
Ω
T=
j
T max.
j
T = 25°C
j
.
1 10 100 1000
0
5
10
15
20
25
30
35
I (A)
TSM
Number of cycles
t=20ms
One cycle
Non repetitive
T initial=25°C
j
Repetitive
T =110°C
C