Data Sheet

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LF353-N

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SNOSBH3F –APRIL 1998–REVISED MARCH 2013

LF353-N Wide Bandwidth Dual JFET Input Operational Amplifier

Check for Samples: LF353-N

FEATURES

DESCRIPTION

These devices are low cost, high speed, dual JFET

• Internally Trimmed Offset Voltage: 10 mV

input operational amplifiers with an internally trimmed

• Low Input Bias Current: 50pA

input offset voltage (BI-FET II technology). They

• Low Input Noise Voltage: 25 nV/√Hz

require low supply current yet maintain a large gain

bandwidth product and fast slew rate. In addition, well

• Low Input Noise Current: 0.01 pA/√Hz

matched high voltage JFET input devices provide

• Wide Gain Bandwidth: 4 MHz

very low input bias and offset currents. The LF353-N

• High Slew Rate: 13 V/μs

is pin compatible with the standard LM1558 allowing

designers to immediately upgrade the overall

• Low Supply Current: 3.6 mA

performance of existing LM1558 and LM358 designs.

• High Input Impedance: 10

These amplifiers may be used in applications such as

• Low Total Harmonic Distortion : ≤0.02%

high speed integrators, fast D/A converters, sample

• Low 1/f Noise Corner: 50 Hz

and hold circuits and many other circuits requiring low

• Fast Settling Time to 0.01%: 2 μs

input offset voltage, low input bias current, high input

impedance, high slew rate and wide bandwidth. The

devices also exhibit low noise and offset voltage drift.

Typical Connection

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

2All trademarks are the property of their respective owners.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.

Summary of content (17 pages)

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LF353-N www.ti.com SNOSBH3F – APRIL 1998 – REVISED MARCH 2013 LF353-N Wide Bandwidth Dual JFET Input Operational Amplifier Check for Samples: LF353-N FEATURES DESCRIPTION • • • • • • • • • • • These devices are low cost, high speed, dual JFET input operational amplifiers with an internally trimmed input offset voltage (BI-FET II technology). They require low supply current yet maintain a large gain bandwidth product and fast slew rate.
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LF353-N SNOSBH3F – APRIL 1998 – REVISED MARCH 2013 www.ti.com Simplified Schematic Figure 1. 1/2 Dual Dual-In-Line Package Top View Figure 2.
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LF353-N www.ti.com SNOSBH3F – APRIL 1998 – REVISED MARCH 2013 These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
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LF353-N SNOSBH3F – APRIL 1998 – REVISED MARCH 2013 www.ti.
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LF353-N www.ti.com SNOSBH3F – APRIL 1998 – REVISED MARCH 2013 Typical Performance Characteristics Input Bias Current Input Bias Current Figure 3. Figure 4. Supply Current Positive Common-Mode Input Voltage Limit Figure 5. Figure 6. Negative Common-Mode Input Voltage Limit Positive Current Limit Figure 7. Figure 8.
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LF353-N SNOSBH3F – APRIL 1998 – REVISED MARCH 2013 www.ti.com Typical Performance Characteristics (continued) 6 Negative Current Limit Voltage Swing Figure 9. Figure 10. Output Voltage Swing Gain Bandwidth Figure 11. Figure 12. Bode Plot Slew Rate Figure 13. Figure 14.
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LF353-N www.ti.com SNOSBH3F – APRIL 1998 – REVISED MARCH 2013 Typical Performance Characteristics (continued) Distortion vs. Frequency Undistorted Output Voltage Swing Figure 15. Figure 16. Open Loop Frequency Response Common-Mode Rejection Ratio Figure 17. Figure 18. Power Supply Rejection Ratio Equivalent Input Noise Voltage Figure 19. Figure 20.
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LF353-N SNOSBH3F – APRIL 1998 – REVISED MARCH 2013 www.ti.com Typical Performance Characteristics (continued) Open Loop Voltage Gain (V/V) Output Impedance Figure 21. Figure 22. Inverter Settling Time Figure 23.
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LF353-N www.ti.com SNOSBH3F – APRIL 1998 – REVISED MARCH 2013 Pulse Response Figure 24. Small Signaling Inverting Figure 25. Large Signal Inverting Figure 26. Small Signal Non-Inverting Figure 27.
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LF353-N SNOSBH3F – APRIL 1998 – REVISED MARCH 2013 www.ti.com Figure 28.
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LF353-N www.ti.com SNOSBH3F – APRIL 1998 – REVISED MARCH 2013 APPLICATION HINTS These devices are op amps with an internally trimmed input offset voltage and JFET input devices (BI-FET II). These JFETs have large reverse breakdown voltages from gate to source and drain eliminating the need for clamps across the inputs. Therefore, large differential input voltages can easily be accommodated without a large increase in input current.
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LF353-N SNOSBH3F – APRIL 1998 – REVISED MARCH 2013 www.ti.
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LF353-N www.ti.com SNOSBH3F – APRIL 1998 – REVISED MARCH 2013 Typical Applications Three-Band Active Tone Control (1) All controls flat. (2) Bass and treble boost, mid flat. (3) Bass and treble cut, mid flat. (4) Mid boost, bass and treble flat. (5) Mid cut, bass and treble flat.
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LF353-N SNOSBH3F – APRIL 1998 – REVISED MARCH 2013 www.ti.
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LF353-N www.ti.
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LF353-N SNOSBH3F – APRIL 1998 – REVISED MARCH 2013 www.ti.com REVISION HISTORY Changes from Revision E (March 2013) to Revision F • 16 Page Changed layout of National Data Sheet to TI format ..........................................................................................................
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IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. Buyers should obtain the latest relevant information before placing orders and should verify that such information is current and complete.