Datasheet

ManualsBrandsVISHAY ManualsFETs2N7002-T1-E3, MOSFET

2N7000/2N7002, VQ1000J/P, BS170

Vishay Siliconix

Document Number: 70226

S-04279—Rev. F, 16-Jul-01

www.vishay.com

11-1

N-Channel 60-V (D-S) MOSFET

PRODUCT SUMMARY

Part Number V

(BR)DSS

Min (V)

DS(on)

Max (W)

GS(th)

(V) I

(A)

2N7000

5 @ V

= 10 V 0.8 to 3 0.2

2N7002 7.5 @ V

= 10 V 1 to 2.5 0.115

VQ1000J

5.5 @ V

= 10 V 0.8 to 2.5 0.225

VQ1000P 5.5 @ V

= 10 V 0.8 to 2.5 0.225

BS170 5 @ V

= 10 V 0.8 to 3 0.5

FEATURES BENEFITS APPLICATIONS

D Low On-Resistance: 2.5 W

D Low Threshold: 2.1 V

D Low Input Capacitance: 22 pF

D Fast Switching Speed: 7 ns

D Low Input and Output Leakage

D Low Offset Voltage

D Low-Voltage Operation

D Easily Driven Without Buffer

D High-Speed Circuits

D Low Error Voltage

D Direct Logic-Level Interface: TTL/CMOS

D Drivers: Relays, Solenoids, Lamps, Hammers,

Displays, Memories, Transistors, etc.

D Battery Operated Systems

D Solid-State Relays

TO-226AA

(TO-92)

Top View

TO-236

(SOT-23)

Top View

Plastic: VQ1000J

Sidebraze: VQ1000P

Top View

TO-92-18RM

(TO-18 Lead Form)

2N7000

BS170

Top View

Dual-In-Line

NC NC

Marking Code: 72wll

72 = Part Number Code for 2N7002

w = Week Code

ll = Lot Traceability

Summary of content (6 pages)

PAGE 1
2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Part Number V(BR)DSS Min (V) 2N7000 2N7002 rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = 10 V 0.8 to 3 0.2 7.5 @ VGS = 10 V 1 to 2.5 0.115 5.5 @ VGS = 10 V 0.8 to 2.5 0.225 VQ1000P 5.5 @ VGS = 10 V 0.8 to 2.5 0.225 BS170 5 @ VGS = 10 V 0.8 to 3 0.
PAGE 2
N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Single Parameter Drain-Source Voltage Gate-Source Voltage—Non-Repetitive Gate-Source Voltage—Continuous Continuous Drain Current (TJ = 150_C) TA= 25_C TA= 100_C Pulsed Drain Currenta Power Dissipation Symbol 2N7000 2N7002 VQ1000J VQ1000P VDS 60 60 60 60 VGSM "40 "40 "30 VGS "20 "20 "20 "20 ID IDM TA= 25_C TA= 100_C Thermal Resistance, Junction-to-Ambient Operating Junction and
PAGE 3
2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix SPECIFICATIONSĊ2N7000 AND 2N7002 (TA = 25_C UNLESS OTHERWISE NOTED) Limits 2N7000 2N7002 Symbol Test Conditions Typa Turn-On Time tON 10 tOFF VDD = 15 V, RL = 25 W ID ^0.5 A, VGEN = 10 V, RG = 25 W 7 Turn-Off Time 7 10 Turn-On Time tON 7 20 Turn-Off Time tOFF VDD = 30 V, RL = 150 W ID ^ 0.
PAGE 4
2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Output Characteristics Transfer Characteristics 1.0 1.0 6.5 V VGS = 10, 9, 8, 7 V 0.8 0.8 6V ID – Drain Current (A) ID – Drain Current (A) TJ = –55_C 5.5 V 0.6 5V 0.4 4.5 V 4V 0.2 3.5 V 3V 0 1 2 3 4 5 125_C 0.4 0.2 2.5 V 2, 1 V 0.0 25_C 0.6 0.0 6 0 1 2 VDS – Drain-to-Source Voltage (V) 3 5 6 7 8 VGS – Gate-to-Source Voltage (V) On-Resistance vs.
PAGE 5
2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 1.000 rDS(on) – On-Resistance ( Ω ) 6 IS – Source Current (A) TJ = 125_C 0.100 TJ = 25_C 0.010 5 ID = 50 mA 4 500 mA 3 2 1 0 0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 2 VSD – Source-to-Drain Voltage (V) 4 6 8 10 12 14 16 18 20 VGS – Gate-to-Source Voltage (V) Threshold Voltage 0.
PAGE 6
Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product.