Datasheet
2N7000/2N7002, VQ1000J/P, BS170
Vishay Siliconix
www.vishay.com
11-2
Document Number: 70226
S-04279—Rev. F, 16-Jul-01
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Single Total Quad
Parameter Symbol 2N7000 2N7002
VQ1000J VQ1000P
VQ1000J/P
BS170 Unit
Drain-Source Voltage V
DS
60 60 60 60 60
Gate-Source Voltage—Non-Repetitive V
GSM
"40 "40 "30 "25
V
Gate-Source Voltage—Continuous V
GS
"20 "20 "20 "20 "20
Continuous Drain Current
T
A
= 25_C
0.2 0.115 0.225 0.225 0.5
Continuous Drain Current
(T
J
= 150_C)
T
A
= 100_C
I
D
0.13 0.073 0.14 0.14 0.175
A
Pulsed Drain Current
a
I
DM
0.5 0.8 1 1
T
A
= 25_C
0.4 0.2 1.3 1.3 2 0.83
Power Dissipation
T
A
= 100_C
P
D
0.16 0.08 0.52 0.52 0.8
W
Thermal Resistance, Junction-to-Ambient R
thJA
312.5 625 96 96 62.5 156
_C/W
Operating Junction and
Storage Temperature Range
T
J
, T
stg
–55 to 150
_C
Notes
a. Pulse width limited by maximum junction temperature.
b. t
p
v 50 ms.
SPECIFICATIONSĊ2N7000 AND 2N7002 (T
A
= 25_C UNLESS OTHERWISE NOTED)
Limits
2N7000 2N7002
Parameter Symbol Test Conditions Typ
a
Min Max Min Max Unit
Static
Drain-Source Breakdown Voltage V
(BR)DSS
V
GS
= 0 V, I
D
= 10 mA
70 60 60
V
DS
= V
GS
, I
D
= 1 mA 2.1 0.8 3
V
Gate-Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 0.25 mA 2.0 1 2.5
V
DS
= 0 V, V
GS
= "15 V "10
Gate-Body Leakage I
GSS
V
DS
= 0 V, V
GS
= "20 V "100
nA
V
DS
= 48 V, V
GS
= 0 V 1
T
C
= 125_C
1000
m
Zero Gate Voltage Drain Current I
DSS
V
DS
= 60 V, V
GS
= 0 V 1
mA
T
C
= 125_C
500
V
DS
= 10 V, V
GS
= 4.5 V 0.35 0.075
On-State Drain Current
b
I
D(on)
V
DS
= 7.5 V, V
GS
= 10 V 1 0.5
A
V
GS
= 4.5 V, I
D
= 0.075 A 4.5 5.3
V
GS
= 5 V, I
D
= 0.05 A 3.2 7.5
Drain-Source On-Resistance
b
r
DS(on)
T
C
= 125_C
5.8 13.5
W
DS(on)
V
GS
= 10 V, I
D
= 0.5 A 2.4 5 7.5
T
J
= 125_C
4.4 9 13.5
Forward Transconductance
b
g
fs
V
DS
= 10 V, I
D
= 0.2 A 100 80
Common Source Output Conductance
b
g
os
V
DS
= 5 V, I
D
= 0.05 A 0.5
mS
Dynamic
Input Capacitance C
iss
22 60 50
Output Capacitance C
oss
V
DS
= 25 V, V
GS
= 0 V
f = 1 MHz
11 25 25
pF
Reverse Transfer Capacitance C
rss
f = 1 MHz
2 5 5