Datasheet

2N7000/2N7002, VQ1000J/P, BS170
Vishay Siliconix
Document Number: 70226
S-04279—Rev. F, 16-Jul-01
www.vishay.com
11-5
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
0
1
2
3
4
5
6
0 2 4 6 8 101214161820
0.001
0.010
0.100
1.000
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
V
SD
– Source-to-Drain Voltage (V) V
GS
– Gate-to-Source Voltage (V)
500 mA
I
D
= 50 mA
T
J
= 25_C
T
J
= 125_C
Threshold Voltage
–0.75
–0.50
–0.25
–0.00
0.25
0.50
–50 –25 0 25 50 75 100 125 150
I
D
= 250 mA
10 K
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
1
0.01
0.1
0.01
0.1 1 10010 1 K
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA, BS170 Only)
Normalized Effective Transient
Thermal Impedance
t
1
– Square Wave Pulse Duration (sec)
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 156_C/W
3. T
JM
– T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
Notes:
P
DM
t
2
I
S
– Source Current (A)
r
DS(on)
– On-Resistance ( Ω )
V
GS(th)
– Variance (V)