Datasheet

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Document Number: 93564
2 Revision: 17-Jun-08
MB High Voltage Series
Vishay High Power Products
Single Phase Bridge
(Power Modules), 25 A/35 A
FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS 26MB-A 36MB-A UNITS
Maximum DC output current
at case temperature
I
O
Resistive or inductive load 25 35
A
Capacitive load 20 28
65 60 °C
Maximum peak, one cycle
non-repetitive forward current
I
FSM
t = 10 ms
No voltage
reapplied
Initial T
J
=
T
J
maximum
400 475
A
t = 8.3 ms 420 500
t = 10 ms
100 % V
RRM
reapplied
335 400
t = 8.3 ms 350 420
Maximum I
2
t for fusing I
2
t
t = 10 ms
No voltage
reapplied
790 1130
A
2
s
t = 8.3 ms 725 1030
t = 10 ms
100 % V
RRM
reapplied
560 800
t = 8.3 ms 512 730
Maximum I
2
t for fusing I
2
t
I
2
t for time t
x
= I
2
t x t
x
;
0.1 t
x
10 ms, V
RRM
= 0 V
5.6 11.3 kA
2
s
Low level of threshold voltage V
F(TO)1
(16.7 % x π x I
F(AV)
< I < π x I
F(AV)
),
T
J
maximum
0.70 0.74
V
High level of threshold voltage V
F(TO)2
(I > π x I
F(AV)
), T
J
maximum 0.75 0.79
Low level forward slope resistance r
t1
(16.7 % x π x I
F(AV)
< I < π x I
F(AV)
),
T
J
maximum
7.0 5.5
mΩ
High level forward slope resistance r
t2
(I > π x I
F(AV)
), T
J
maximum 6.4 5.2
Maximum forward voltage drop V
FM
T
J
= 25 °C, I
FM
= 40 Apk
(26MB)
t
p
= 400 µs 1.25 1.3 V
T
J
= 25 °C, I
FM
= 55 Apk
(36MB)
Maximum DC reverse current per diode I
RRM
T
J
= 25 °C, at V
RRM
10 10 µA
RMS isolation voltage base plate V
ISOL
f = 50 Hz, t = 1 s 2700 2700 V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS 26MB-A 36MB-A UNITS
Junction and storage
temperature range
T
J
, T
Stg
- 55 to 150 °C
Maximum thermal resistance,
junction to case per bridge
R
thJC
1.7 1.35
K/W
Maximum thermal resistance,
case to heatsink
R
thCS
Mounting surface, smooth, flat and greased 0.2
Mounting torque ± 10 % Bridge to heatsink 2.0 Nm
Approximate weight 20 g