Datasheet

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Document Number: 83725
2 Rev. 1.5, 27-Feb-07
4N25/4N26/4N27/4N28
Vishay Semiconductors
Optocoupler, Phototransistor Output,
with Base Connection
Note
T
amb
= 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied
at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for
extended periods of the time can adversely affect reliability.
ABSOLUTE MAXIMUM RATINGS
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
Reverse voltage V
R
6V
Forward current I
F
60 mA
Surge current t ≤ 10 µs I
FSM
2.5 A
Power dissipation P
diss
100 mW
OUTPUT
Collector emitter breakdown voltage V
CEO
70 V
Emitter base breakdown voltage V
EBO
7V
Collector current
I
C
50 mA
t ≤ 1.0 ms I
C
100 mA
Power dissipation P
diss
150 mW
COUPLER
Isolation test voltage V
ISO
5300 V
RMS
Creepage ≥ 7.0 mm
Clearance ≥ 7.0 mm
Isolation thickness between emitter and
detector
≥ 0.4 mm
Comparative tracking index DIN IEC 112/VDE0303, part 1 175
Isolation resistance
V
IO
= 500 V, T
amb
= 25 °C R
IO
10
12
Ω
V
IO
= 500 V, T
amb
= 100 °C R
IO
10
11
Ω
Storage temperature T
stg
- 55 to + 150 °C
Operating temperature T
amb
- 55 to + 100 °C
Junction temperature T
j
100 °C
Soldering temperature
max.10 s dip soldering:
distance to seating plane
≥ 1.5 mm
T
sld
260 °C
ELECTRICAL CHARACTERISTICS
(1)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage
(2)
I
F
= 50 mA V
F
1.3 1.5 V
Reverse current
(2)
V
R
= 3.0 V I
R
0.1 100 µA
Capacitance V
R
= 0 V C
O
25 pF
OUTPUT
Collector base breakdown voltage
(2)
I
C
= 100 µA BV
CBO
70 V
Collector emitter breakdown volt-
age
(2)
I
C
= 1.0 mA BV
CEO
30 V
Emitter collector breakdown volt-
age
(2)
I
E
= 100 µA BV
ECO
7V
I
CEO
(dark)
(2)
V
CE
= 10 V, (base open)
4N25 5 50 nA
4N26 5 50 nA
4N27 5 50 nA
4N28 10 100 nA