User Manual

70CRU04
Bulletin PD-20637 rev. A 12/06
V
BR
, V
r
Breakdown Voltage, 400 - - V I
R
= 100μA
Blocking Voltage
V
F
Forward Voltage - 1.11 1.32 V I
F
= 35A
- 0.98 1.14 V I
F
= 35A, T
J
= 125°C
- 0.92 1.05 V I
F
= 35A, T
J
= 175°C
I
R
Reverse Leakage Current - - 100 μAV
R
= V
R
Rated
--2mAT
J
= 150°C, V
R
= V
R
Rated
C
T
Junction Capacitance - 70 - pF V
R
= 400V
Electrical Characteristics per Diode @ T
J
= 25°C (unless otherwise specified)
Parameters Min Typ Max Units Test Conditions
t
rr
Reverse Recovery Time - 32 38 ns T
J
= 25°C
t
rr
Reverse Recovery Time - 72 - ns T
J
= 25°C
- 130 - T
J
= 125°C
I
RRM
Peak Recovery Current - 7.7 - A T
J
= 25°C
- 16.5 - T
J
= 125°C
Q
rr
Reverse Recovery Charge - 0.28 - μCT
J
= 25°C
- 1.08 - T
J
= 125°C
Dynamic Recovery Characteristics per Diode @ T
J
= 25°C (unless otherwise specified)
I
F
= 1A
V
R
= 30V
di
F
/dt = 200A/μs
Parameters Min Typ Max Units Test Conditions
I
F
= 35A
V
R
= 200V
di
F
/dt = 200A/μs
Thermal - Mechanical Characteristics
Parameters Min Typ Max Units
R
thJC
Thermal Resistance, Junction to Case Per Diode - 0.8 1.6 K/W
R
thJC
Thermal Resistance, Junction to Case Both Diodes - 0.4 0.8
R
thCS
(1)
Thermal Resistance, Case to Heatsink - 0.2 -
Wt Weight - 4 - g
- 0.13 - (oz)
T Mounting Torque 1.2 - 2.4 N * m
10 - 20 lbf.in
Marking Device 70CRU04
(1) Mounting Surface, Flat, Smooth and Greased
Document Number: 93023
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