Datasheet

B40C800G, B80C800G, B125C800G, B250C800G, B380C800G
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Vishay Semiconductors
Revision: 08-Jul-13
3
Document Number: 88534
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Fig. 5 - Typical Reverse Characteristics Per Diode Fig. 6 - Typical Junction Capacitance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
20
40
80
100
0.01
0.1
1
10
0
60
T
J
= 100 °C
T
J
= 25 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (µA)
0.1
1
10
100
1
10
100
Reverse Voltage (V)
Junction Capacitance (pF)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
0.220 (5.6)
0.160 (4.1)
0.388 (9.86)
0.348 (8.84)
1.0 (25.4) MIN.
0.060 (1.52)
0.020 (0.51)
0.032 (0.81)
0.028 (0.71)
0.348 (8.84)
0.308 (7.82)
0.220 (5.6)
0.180 (4.6)
0.220 (5.6)
0.180 (4.6)
Case Style WOG