Datasheet

BAS16WS
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 13-May-13
1
Document Number: 85752
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Small Signal Fast Switching Diode
MECHANICAL DATA
Case: SOD-323
Weight: approx. 4.3 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
FEATURES
Silicon epitaxial planar diode
Fast switching diode
AEC-Q101 qualified
Base P/N-E3 - RoHS-compliant, commercial
grade
Base P/N-HE3 - RoHS-compliant, AEC-Q101
qualified
Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
PARTS TABLE
PART ORDERING CODE INTERNAL CONSTRUCTION TYPE MARKING REMARKS
BAS16WS
BAS16WS-E3-08 or BAS16WS-E3-18
Single diode A6 Tape and reel
BAS16WS-HE3-08 or BAS16WS-HE3-18
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage V
R
75 V
Repetitive peak reverse voltage V
RRM
100 V
Forward current (continuous) I
F
250 mA
Non-repetitive peak forward current
t = 1 μs I
FSM
2A
t = 1 ms I
FSM
1A
t = 1 s I
FSM
0.5 A
Power dissipation P
tot
200 mW
THERMAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air R
thJA
650 K/W
Junction temperature T
j
150 °C
Storage temperature range T
stg
- 65 to + 150 °C
Operating temperature range T
op
- 55 to + 150 °C

Summary of content (4 pages)