Datasheet

BAS81, BAS82, BAS83
www.vishay.com
Vishay Semiconductors
Rev. 2.0, 02-Jun-17
2
Document Number: 85509
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TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Max. Reverse Power Dissipation vs.
Junction Temperature
Fig. 2 - Reverse Current vs. Junction Temperature
Fig. 3 - Forward Current vs. Forward Voltage
Fig. 4 - Diode Capacitance vs. Reverse Voltage
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage
I
F
= 0.1 mA V
F
330 mV
I
F
= 1 mA V
F
410 mV
I
F
= 15 mA V
F
1000 mV
Reserve current V
R
= V
Rmax.
I
R
200 nA
Diode capacitance V
R
= 1 V, f = 1 MHz C
D
1.6 pF
0
2
4
6
8
10
12
14
25 50 75 100 125 150
T
j
- Junction Temperature (°C)
15794
V
R
= 60 V
P
R
- Reverse Power Dissipation (mW)
R
thJA
= 540 K/W
P
R
V
R
- Limit at 100 %
P
R
- Limit at 100 % V
R
P
R
- Limit at 80 % V
R
0.1
100
1000
25 50 75 100 125 150
1
10
15795
V
R
= V
RRM
I - Reverse Current (µA)
R
T
j
- Junction Temperature (°C)
0 0.5 1 1.5 2.0
I- Forward Current (mA)
V
F
- Forward Voltage (V)
15796
F
T
j
= 25 °C
T
j
= 125 °C
0.1
1
10
100
1000
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.1 1 10 100
V
R
- Reverse Voltage (V)
15797
C
D
- Diode Capacitance (pF)
f = 1 MHz