Datasheet

BAT54, BAT54A, BAT54C, BAT54S
www.vishay.com
Vishay Semiconductors
Rev. 2.0, 02-Jun-17
2
Document Number: 85508
For technical questions within your region: [e-mail]
, [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
LAYOUT FOR R
thJA
TEST
Thickness:
Fiberglas 15 mm (0.059")
Copper leads 0.3 mm (0.012")
TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Typical Forward Voltage Forward Current vs.
Various Temperatures
Fig. 2 - Diode Capacitance vs. Reverse Voltage V
R
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Reserve breakdown voltage I
R
= 100 μA (pulsed) V
(BR)
30 V
Leakage current Pulsed test t
p
< 300 μs, δ <2 % at V
R
= 25 V I
R
2μA
Forward voltage
I
F
= 0.1 mA, t
p
< 300 μs, δ < 2 % V
F
240 mV
I
F
= 1 mA, t
p
< 300 μs, δ < 2 % V
F
320 mV
I
F
= 10 mA, t
p
< 300 μs, δ < 2 % V
F
400 mV
I
F
= 30 mA, t
p
< 300 μs, δ < 2 % V
F
500 mV
I
F
= 100 mA, t
p
< 300 μs, δ < 2 % V
F
800 mV
Diode capacitance V
R
= 1 V, f = 1 MHz C
D
10 pF
Reserve recovery time
I
F
= 10 mA to I
R
= 10 mA,
i
R
= 1 mA, R
L
= 100 Ω
t
rr
5ns
17451
15 (0.59)
12 (0.47)
0.8 (0.03)
5 (0.2)
7.5 (0.3)
3 (0.12)
1 (0.4)
1 (0.4)
2 (0.8)
2 (0.8)
1.5 (0.06)
5.1 (0.2)
18867
1000
100
10
1
0.1
0.01
I - Forward Current (mA)
F
0 0.4
0.6 1.2 1.4
0.8 10.2
V
F
- Forward Voltage (V)
= 125 °CT
j
25 °C
- 40 °C
18868
10
14
12
2
4
0
0 4 12 16 20 24 28
C - Typical Capacitance (pF)
D
V
R
- Reverse Voltage (V)
6
8
8