Datasheet

BPW21R
www.vishay.com
Vishay Semiconductors
Rev. 1.7, 23-Nov-11
1
Document Number: 81519
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Silicon Photodiode
DESCRIPTION
BPW21R is a planar Silicon PN photodiode in a hermetically
sealed short TO-5 case, especially designed for high
precision linear applications.
Due to its extremely high dark resistance, the short circuit
photocurrent is linear over seven decades of illumination
level.
On the other hand, there is a strictly logarithmic correlation
between open circuit voltage and illumination over the same
range.
The device is equipped with a flat glass window with built in
color correction filter, giving an approximation to the
spectral response of the human eye.
FEATURES
• Package type: leaded
• Package form: TO-5
• Dimensions (in mm): Ø 8.13
• Radiant sensitive area (in mm
2
): 7.5
• High photo sensitivity
• Adapted to human eye responsivity
• Angle of half sensitivity: ϕ = ± 50°
• Hermetically sealed package
• Cathode connected to package
• Flat glass window
• Low dark current
• High shunt resistance
• High linearity
• Compliant to RoHS Directive 2002/95/EC and in
accordance with WEEE 2002/96/EC
APPLICATIONS
• Sensor in exposure and color measuring purposes
Note
• Test condition see table “Basic Characteristics”
Note
• MOQ: minimum order quantity
94 8394
PRODUCT SUMMARY
COMPONENT I
ra
(μA) ϕ (deg) λ
0.5
(nm)
BPW21R 9 ± 50 420 to 675
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
BPW21R Bulk MOQ: 500 pcs, 500 pcs/bulk TO-5
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage V
R
10 V
Power dissipation T
amb
≤ 50 °C P
V
300 mW
Junction temperature T
j
125 °C
Operating temperature range T
amb
- 40 to + 125 °C
Storage temperature range T
stg
- 40 to + 125 °C
Soldering temperature t ≤ 5 s T
sd
260 °C
Thermal resistance junction/ambient Connected with Cu wire, 0.14 mm
2
R
thJA
250 K/W