Datasheet

BPW21R
www.vishay.com
Vishay Semiconductors
Rev. 1.7, 23-Nov-11
2
Document Number: 81519
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BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage I
F
= 50 mA V
F
1.0 1.3 V
Breakdown voltage I
R
= 20 μA, E = 0 V
(BR)
10 V
Reverse dark current V
R
= 5 V, E = 0 I
ro
230nA
Diode capacitance
V
R
= 0 V, f = 1 MHz, E = 0 C
D
1.2 nF
V
R
= 5 V, f = 1 MHz, E = 0 C
D
400 pF
Dark resistance V
R
= 10 mV R
D
38 GΩ
Open circuit voltage E
A
= 1 klx V
o
280 450 mV
Temperature coefficient of V
o
E
A
= 1 klx TK
Vo
- 2 mV/K
Short circuit current E
A
= 1 klx I
k
4.5 9 μA
Temperature coefficient of I
K
E
A
= 1 klx TK
Ik
- 0.05 %/K
Reverse light current E
A
= 1 klx, V
R
= 5 V I
ra
4.5 9 μA
Sensitivity V
R
= 5 V, E
A
= 10
-2
to 10
5
lx S 9 nA/Ix
Angle of half sensitivity ϕ ± 50 deg
Wavelength of peak sensitivity λ
p
565 nm
Range of spectral bandwidth λ
0.5
420 to 675 nm
Rise time V
R
= 0 V, R
L
= 1 kΩ, λ = 660 nm t
r
3.1 μs
Fall time V
R
= 0 V, R
L
= 1 kΩ, λ = 660 nm t
f
3.0 μs
40 60 80
120
10020
I - Reverse Dark Current (nA)
ro
94 8468
10
10
1
10
2
10
3
10
4
V
R
=5V
T
amb
- Ambient Temperature (°C)
020406080
0.8
0.9
1.0
1.1
1.3
120
1.2
100
94 8738
T
amb
- Ambient Temperature
I
ra rel
- RelativeReverse Light Current