Datasheet

ManualsBrandsVishay ManualsIR PhototransistorsIR phototransistor 850 nm 70 V T-1 3/4 5 mm

BPW96

Vishay Telefunken

1 (6)

Rev. 3, 16-Nov-99

www.vishay.de • FaxBack +1-408-970-5600

Document Number 81532

Silicon NPN Phototransistor

Description

BPW96 is a high speed and high sensitive silicon NPN

epitaxial planar phototransistor in a standard T–1

(ø 5 mm) package. Due to its waterclear epoxy the de-

vice is sensitive to visible and near infrared radiation.

The viewing angle of ± 20

makes it insensible to ambi-

ent straylight.

Features

Fast response times

High photo sensitivity

Standard T–1

(ø 5 mm) clear plastic package

Angle of half sensitivity ϕ = ± 20

Suitable for visible and near infrared radiation

Selected into sensitivity groups

94 8391

Applications

Detector in electronic control and drive circuits

Absolute Maximum Ratings

amb

= 25

Parameter Test Conditions Symbol Value Unit

Collector Emitter Voltage V

CEO

70 V

Emitter Collector Voltage V

ECO

5 V

Collector Current I

50 mA

Peak Collector Current

/T = 0.5, t

10 ms

100 mA

Total Power Dissipation

amb

tot

150 mW

Junction Temperature T

100

Storage Temperature Range T

stg

–55...+100

Soldering Temperature

3 s

260

Thermal Resistance Junction/Ambient R

thJA

350 K/W

Summary of content (6 pages)

PAGE 1
BPW96 Vishay Telefunken Silicon NPN Phototransistor Description BPW96 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T–1¾ (ø 5 mm) package. Due to its waterclear epoxy the device is sensitive to visible and near infrared radiation. The viewing angle of ± 20° makes it insensible to ambient straylight.
PAGE 2
BPW96 Vishay Telefunken Basic Characteristics Tamb = 25_C Parameter Collector Emitter Breakdown Voltage Collector Dark Current Collector Emitter Capacitance Angle of Half Sensitivity Wavelength of Peak Sensitivity Range of Spectral Bandwidth Collector Emitter Saturation Voltage Turn–On Time Turn–Off Time Cut–Off Frequency Test Conditions IC = 1 mA Symbol V(BR)CE Min 70 Typ Max Unit V 1 3 ±20 850 620...980 200 nA pF deg nm nm V O VCE = 20 V, E = 0 VCE = 5 V, f = 1 MHz, E = 0 ICEO CCEO ϕ lp l0.
PAGE 3
BPW96 C CEO – Collector Emitter Capacitance ( pF ) Vishay Telefunken I ca rel – Relative Collector Current 2.0 1.8 VCE=5V Ee=1mW/cm2 l=950nm 1.6 1.4 1.2 1.0 0.8 0.6 0 20 40 60 80 BPW 96 B 1 BPW 96 A 0.1 VCE=5V l=950nm mW / cm2 ) 0 0.1 1 100 10 VCE – Collector Emitter Voltage ( V ) Figure 6. Collector Emitter Capacitance vs. Collector Emitter Voltage 8 VCE=5V RL=100W l=950nm 6 4 toff 2 ton 0.5 mW/cm2 0.2 mW/cm2 1 0.1 mW/cm2 0.05 mW/cm2 l=950nm 0.1 0.
PAGE 4
BPW96 Vishay Telefunken S rel – Relative Sensitivity 0° 10 ° 20 ° 30° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 80° 0.6 0.4 0.2 0 0.2 0.4 0.6 94 8299 Figure 9. Relative Radiant Sensitivity vs. Angular Displacement www.vishay.de • FaxBack +1-408-970-5600 4 (6) Document Number 81532 Rev.
PAGE 5
BPW96 Vishay Telefunken Dimensions in mm 96 12192 Document Number 81532 Rev. 3, 16-Nov-99 www.vishay.
PAGE 6
BPW96 Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.