Datasheet

BYG21K-E3/HE3, BYG21M-E3/HE3
www.vishay.com
Vishay General Semiconductor
Revision: 21-Aug-13
1
Document Number: 88961
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Fast Avalanche SMD Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated junction
• Low reverse current
• Soft recovery characteristic
• Fast reverse recovery time
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in fast switching rectification of power supply,
inverters, converters, and freewheeling diodes for
consumer, automotive, and telecommunication.
MECHANICAL DATA
Case: DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
PRIMARY CHARACTERISTICS
I
F(AV)
1.5 A
V
RRM
800 V, 1000 V
I
FSM
30 A
I
R
1.0 μA
V
F
1.6 V
t
rr
120 ns
E
R
20 mJ
T
J
max. 150 °C
Package DO-214AC (SMA)
Diode variation Single die
DO-214AC (SMA)
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL BYG21K BYG21M UNIT
Device marking code BYG21K BYG21M
Maximum repetitive peak reverse voltage V
RRM
800 1000 V
Average forward current I
F(AV)
1.5 A
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
I
FSM
30 A
Pulse energy in avalanche mode, non repetitive
(inductive load switch off) I
(BR)R
= 1 A, T
J
= 25 °C
E
R
20 mJ
Operating junction and storage temperature range T
J
, T
STG
- 55 to + 150 °C