Datasheet

BYS12-90-M3
www.vishay.com
Vishay General Semiconductor
Revision: 09-May-2019
1
Document Number: 89412
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface Mount Schottky Barrier Rectifier
DESIGN SUPPORT TOOLS AVAILABLE
FEATURES
• Low profile package
• Ideal for automated placement
• Guardring for overvoltage protection
• Low power losses, high efficiency
• Very low switching losses
• High surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency inverters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters, and reverse battery protection.
MECHANICAL DATA
Case: SMA (DO-214AC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test
Polarity: color band denotes the cathode end
PRIMARY CHARACTERISTICS
I
F(AV)
1.5 A
V
RRM
90 V
I
FSM
40 A
V
F
0.75 V
T
J
max. 150 °C
Package SMA (DO-214AC)
Circuit configuration Single
SMA (DO-214AC)
3
3
D
D
3
D
3D Models
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL BYS12-90 UNIT
Device marking code BYS209
Maximum repetitive peak reverse voltage V
RRM
90 V
Maximum average forward rectified current I
F(AV)
1.5 A
Peak forward surge current single half sine-wave
superimposed on rated load
8.3 ms
I
FSM
40
A
10 ms 30
Voltage rate of change (rated V
R
) dV/dt 10 000 V/μs
Junction and storage temperature range T
J
, T
STG
-55 to +150 °C