Datasheet

BYV26A, BYV26B, BYV26C, BYV26D, BYV26E
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 04-Sep-12
1
Document Number: 86040
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Ultra-Fast Avalanche Sinterglass Diode
MECHANICAL DATA
Case: SOD-57
Terminals: plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity: color band denotes cathode end
Mounting position: any
Weight: approx. 369 mg
FEATURES
• Glass passivated junction
• Hermetically sealed package
• Very low switching losses
• Low reverse current
• High reverse voltage
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Switched mode power supplies
• High-frequency inverter circuits



949539
ORDERING INFORMATION (Example)
DEVICE NAME ORDERING CODE TAPED UNITS MINIMUM ORDER QUANTITY
BYV26E BYV26E-TR 5000 per 10" tape and reel 25 000
BYV26E BYV26E-TAP 5000 per ammopack 25 000
PARTS TABLE
PART TYPE DIFFERENTIATION PACKAGE
BYV26A V
R
= 200 V; I
F(AV)
= 1 A SOD-57
BYV26B V
R
= 400 V; I
F(AV)
= 1 A SOD-57
BYV26C V
R
= 600 V; I
F(AV)
= 1 A SOD-57
BYV26D V
R
= 800 V; I
F(AV)
= 1 A SOD-57
BYV26E V
R
= 1000 V; I
F(AV)
= 1 A SOD-57
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT
Reverse voltage = repetitive peak reverse
voltage
See electrical characteristics
BYV26A V
R
= V
RRM
200 V
BYV26B V
R
= V
RRM
400 V
BYV26C V
R
= V
RRM
600 V
BYV26D V
R
= V
RRM
800 V
BYV26E V
R
= V
RRM
1000 V
Peak forward surge current t
p
= 10 ms, half sine wave I
FSM
30 A
Average forward current I
F(AV)
1A
Non repetitive reverse avalanche energy I
(BR)R
= 1 A, inductive load E
R
10 mJ
Junction and storage temperature range T
j
= T
stg
- 55 to + 175 °C
MAXIMUM THERMAL RESISTANCE (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Junction ambient l = 10 mm, T
L
= constant R
thJA
45 K/W