Datasheet

EGF1T
www.vishay.com
Vishay General Semiconductor
Revision: 16-Aug-13
1
Document Number: 88904
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface Mount Glass Passivated Ultrafast Rectifier
FEATURES
Superectifier structure for high reliability condition
Cavity-free glass-passivated junction
Ideal for automated placement
Ultrafast reverse recovery time
Low switching losses, high efficiency
Avalanche surge energy capability
Meets environmental standard MIL-S-19500
Meets MSL level 1, per J-STD-020, LF maximum peak of
250 °C
AEC-Q101 qualified
Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high voltage rectification of photoflash
application.
MECHANICAL DATA
Case: DO-214BA, molded plastic over glass body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
PRIMARY CHARACTERISTICS
I
F(AV)
1.0 A
V
RRM
1300 V
I
FSM
20 A
t
rr
75 ns
E
AS
15 mJ
V
F
at I
F
= 1.0 A 3.0 V
T
J
max. 150 °C
Package DO-214BA (GF1)
Diode variations Single die
DO-214BA (GF1)
SUPERECTIFIER
®
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL EGF1T UNIT
Device marking code ET
Maximum repetitive peak reverse voltage V
RRM
1300 V
Maximum RMS voltage V
RMS
910 V
Maximum DC blocking V
DC
1300 V
Maximum average forward rectified current I
F(AV)
1.0 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
20 A
Non-repetitive avalanche energy at T
A
= 25 °C, I
AS
= 1 A, L = 30 mH E
AS
15 mJ
Operating junction and storage temperature range T
J
, T
STG
- 55 to + 150 °C

Summary of content (4 pages)