Datasheet

Parameter Max. Units
V
R
Cathode-to-Anode Voltage 600 V
I
F
@ T
C
= 100°C Continuous Forward Current 8.0
I
FSM
Single Pulse Forward Current 60 A
I
FRM
Maximum Repetitive Forward Current 24
P
D
@ T
C
= 25°C Maximum Power Dissipation 36
P
D
@ T
C
= 100°C Maximum Power Dissipation 14
T
J
Operating Junction and
T
STG
Storage Temperature Range
Bulletin PD -20607 rev. B 12/00
Ultrafast Recovery
• Ultrasoft Recovery
Very Low
I
RRM
• Very Low Q
rr
• Specified at Operating Conditions
Benefits
• Reduced RFI and EMI
• Reduced Power Loss in Diode and Switching
Transistor
Higher Frequency Operation
Reduced Snubbing
• Reduced Parts Count
Features
Description
International Rectifier's HFA08TB60S is a state of the art ultra fast recovery diode.
Employing the latest in epitaxial construction and advanced processing techniques
it features a superb combination of characteristics which result in performance
which is unsurpassed by any rectifier previously available. With basic ratings of 600
volts and 8 amps continuous current, the HFA08TB60S is especially well suited for
use as the companion diode for IGBTs and MOSFETs. In addition to ultra fast
recovery time, the HEXFRED product line features extremely low values of peak
recovery current (I
RRM
) and does not exhibit any tendency to "snap-off" during the
t
b
portion of recovery. The HEXFRED features combine to offer designers a rectifier
with lower noise and significantly lower switching losses in both the diode and the
switching transistor. These HEXFRED advantages can help to significantly reduce
snubbing, component count and heatsink sizes. The HEXFRED HFA08TB60S is
ideally suited for applications in power supplies (PFC Boost diode) and power
conversion systems (such as inverters), motor drives, and many other similar
applications where high speed, high efficiency is needed.
Ultrafast, Soft Recovery DiodeHEXFRED
TM
HFA08TB60S
Absolute Maximum Ratings
-55 to +150
W
°C
V
R
= 600V
V
F
(typ.)* = 1.4V
I
F(AV)
= 8.0A
Q
rr
(typ.)= 65nC
I
RRM
= 5.0A
t
rr
(typ.)
= 18ns
di
(rec)M
/dt (typ.) = 240A/µs
* 125°C
D
2
Pak
1
+
3
2
BASE
(N/C)
(A)
(K)
_
1

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