Datasheet

ManualsBrandsVISHAY ManualsFETsIRF634PBF, MOSFET

Document Number: 91034 www.vishay.com

S11-0509-B, 21-Mar-11 1

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

Power MOSFET

IRF634, SiHF634

Vishay Siliconix

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

•Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The TO-220AB package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 W. The low thermal resistance

and low package cost of the TO-220AB contribute to its

wide acceptance throughout the industry.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V

= 50 V, starting T

= 25 °C, L = 7.3 mH, R

= 25 , I

= 8.1 A (see fig. 12).

c. I

 8.1 A, dI/dt  120 A/μs, V

 V

, T

 150 °C.

d. 1.6 mm from case.

PRODUCT SUMMARY

(V) 250

DS(on)

()V

= 10 V 0.45

(Max.) (nC) 41

(nC) 6.5

(nC) 22

Configuration Single

N-Channel MOSFET

TO-220AB

Available

RoHS*

COMPLIANT

ORDERING INFORMATION

Package TO-220AB

Lead (Pb)-free

IRF634PbF

SiHF634-E3

SnPb

IRF634

SiHF634

ABSOLUTE MAXIMUM RATINGS (T

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

250

Gate-Source Voltage V

± 20

Continuous Drain Current V

at 10 V

= 25 °C

8.1

= 100 °C 5.1

Pulsed Drain Current

Linear Derating Factor 0.59 W/°C

Single Pulse Avalanche Energy

300 mJ

Repetitive Avalanche Current

8.1 A

Repetitive Avalanche Energy

7.4 mJ

Maximum Power Dissipation T

= 25 °C P

74 W

Peak Diode Recovery dV/dt

dV/dt 4.8 V/ns

Operating Junction and Storage Temperature Range T

, T

stg

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature) for 10 s 300

Mounting Torque 6-32 or M3 screw

10 lbf · in

1.1 N · m

* Pb containing terminations are not RoHS compliant, exemptions may apply

Summary of content (9 pages)

PAGE 1
IRF634, SiHF634 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Dynamic dV/dt Rating 250 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 41 • Fast Switching Qgs (nC) 6.5 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration Single DESCRIPTION TO-220AB Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
PAGE 2
IRF634, SiHF634 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 62 Case-to-Sink, Flat, Greased Surface RthCS 0.50 - Maximum Junction-to-Case (Drain) RthJC - 1.7 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX.
PAGE 3
IRF634, SiHF634 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V 101 100 4.5 V ID, Drain Current (A) ID, Drain Current (A) Top 20 µs Pulse Width TC = 25 °C 100 10-1 150 °C 4 100 20 µs Pulse Width TC = 150 °C 100 91034_02 101 VDS, Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics, TC = 150 °C Document Number: 91034 S11-0509-B, 21-Mar-11 6 7 8 9 10 Fig.
PAGE 4
IRF634, SiHF634 1750 VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd Capacitance (pF) 1400 1050 Ciss 700 Coss 350 Crss ISD, Reverse Drain Current (A) Vishay Siliconix 101 150 °C 100 0 VGS = 0 V 10-1 100 101 0.
PAGE 5
IRF634, SiHF634 Vishay Siliconix RD VDS VGS 10 8 ID, Drain Current (A) D.U.T. RG + - VDD 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % 6 Fig. 10a - Switching Time Test Circuit 4 2 VDS 90 % 0 25 50 75 100 125 150 TC, Case Temperature (°C) 91034_09 10 % VGS td(on) Fig. 9 - Maximum Drain Current vs. Case Temperature td(off) tf tr Fig. 10b - Switching Time Waveforms Thermal Response (ZthJC) 10 1 0 - 0.5 0.2 0.1 PDM 0.1 0.05 t1 0.02 0.
PAGE 6
IRF634, SiHF634 Vishay Siliconix VDS L Vary tp to obtain required IAS VDS tp VDD D.U.T RG + - IAS V DD VDS A 10 V 0.01 Ω tp IAS Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms EAS, Single Pulse Energy (mJ) 700 ID 3.6 A 5.1 A Bottom 8.1 A Top 600 500 400 300 200 100 0 VDD = 50 V 25 91034_12c 50 75 100 125 150 Starting TJ, Junction Temperature (°C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T.
PAGE 7
IRF634, SiHF634 Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg • • • • + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T.
PAGE 8
Package Information www.vishay.com Vishay Siliconix TO-220-1 MILLIMETERS A E F D H(1) Q ØP 3 2 L(1) 1 M* L b(1) INCHES DIM. MIN. MAX. MIN. MAX. A 4.14 4.70 0.163 0.185 b 0.69 1.02 0.027 0.040 b(1) 1.14 1.73 0.045 0.068 c 0.36 0.61 0.014 0.024 D 14.33 15.85 0.564 0.624 E 9.96 10.52 0.392 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 0.43 1.40 0.017 0.055 H(1) 6.10 6.48 0.240 0.255 0.115 J(1) 2.41 2.92 0.095 L 13.
PAGE 9
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